PN2222A Features Halogen Free Available Upon Request By Adding Suffix-H Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN General Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Purpose Amplifier Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 o Thermal Resistance: 200 C/W Junction to Ambient o Thermal Resistance: 83.3 C/W Junction to Case Parameter Symbol Rating Unit Collector-Base Voltage V 75 V CBO Collector-Emitter Voltage V 40 V TO-92 CEO Emitter-Base Voltage V 6 V EBO Continuous Collector Current I 600 mA C P 625 mW Power Dissipation D A E Marking:Type Number B 1 2 3 Internal Structure G C C B 1.EMITTER 2.BASE 3.COLLECTOR E D DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.169 0.185 4.30 4.70 B 0.169 0.185 4.30 4.70 C 0.500 ----- 12.70 ----- D 0.015 0.022 0.38 0.55 E 0.130 0.146 3.30 3.70 0.095 0.105 2.42 2.67 Straight Lead G 0.173 0.220 4.40 5.60 Bent Rev.3-2-12012020 1/4 MCCSEMI.COMPN2222A Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V 75 V I =10A, I =0 (BR)CBO C E Collector-Emitter Breakdown Voltage* V 40 V I =10mA, I =0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I =10A, I =0 (BR)EBO E C Base Cutoff Current I 0.02 A V =60V, V =3V BL CE BE Collector Cut-off Current I 0.01 A V =60V, V =3V CEX CE BE h V =10V, I =0.1mA 35 FE(1) CE C h V =10V, I =1mA 50 FE(2) CE C h V =10V, I =10mA 75 FE(3) CE C DC Current Gain* h V =10V, I =150mA 100 300 FE(4) CE C h V =1V, I =150mA 50 FE(5) CE C h V =10V, I =500mA 40 FE(6) CE C I =150mA, I =15mA 0.3 V C B V Collector-Emitter Saturation Voltage CE(sat) =500mA, I =50mA 1V I C B 0.6 1.2 V I =150mA, I =15mA C B Base-Emitter Saturation Voltage V BE(sat) 2V I =500mA, I =50mA C B Transition Frequency f 300 MHz V =20V, I =20mA, f=100MHz T CE C Delay Time t 10 ns V =30V, V =0.5V, I =150mA, d CC BE C I =15mA Rise Time t 25 ns B1 r t Storage Time 225 ns s V =30V, I =150mA, I =I =15mA CC C B1 B2 t Fall Time 60 ns f C V =10V, I =0,f=100Hz Output Capacitance 8pF cbo CB E C V =0.5V, I =0, f=100Hz Input Capacitance 25 pF ibo BE C N V =10V,I =0.1mA,f=1KHz,R =1K Noise Figure 4 dB F CE C S *.Pulse test: Pulse Width300s,Duty Cycle2.0%. Rev.3-2-12012020 2/4 MCCSEMI.COM