PN2907A Features Halogen Free Available Upon Request By Adding Suffix-H Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP General Lead Free Finish/RoHS Compliant Suffix Designates RoHS Purpose Amplifier Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 208/W Junction to Ambient Parameter Symbol Rating Unit Collector-Base Voltage V -60 V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -5 V EBO TO-92 Continuous Collector Current I -600 mA C P 625 mW Power Dissipation D A E Marking: Part Number Internal Structure B 1 2 3 G C C B 1.EMITTER 2.BASE 3.COLLECTOR E D DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.169 0.185 4.30 4.70 B 0.169 0.185 4.30 4.70 C 0.500 ----- 12.70 ----- D 0.015 0.022 0.38 0.55 E 0.130 0.146 3.30 3.70 0.095 0.105 2.42 2.67 Straight Lead G 0.173 0.220 4.40 5.60 Bent Rev.3-2-09062019 1/4 MCCSEMI.COMPN2907A Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V -60 V I =-10A, I =0 (BR)CBO C E Collector-Emitter Breakdown Voltage* V -60 V I =-10mA, I =0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I =-10A, I =0 (BR)EBO E C Collector Cut-off Current I -0.05 A V =-30V, V =-0.5V CEX CE BE Base Cutoff Current I -0.05 A V =-30V, V =-0.5V BL CE BE V =-50V, I =0 -0.1 A CB E I Collector Cut-off Current CBO -10 A V =-50V, I =0, T =150 CB E A h V =-10V, I =-0.1mA 75 FE(1) CE C h V =-10V, I =-1mA 100 FE(2) CE C h V =-10V, I =-10mA DC Current Gain* 100 300 FE(3) CE C h V =-10V, I =-150mA 100 FE(4) CE C h V =-10V, I =-500mA 50 FE(5) CE C I =-150mA, I =-15mA -0.4 V C B Collector-Emitter Saturation Voltage V CE(sat) -1.6 V I =-500mA, I =-50mA C B -1.3 V I =-150mA, I =-15mA C B Base-Emitter Saturation Voltage V BE(sat) -2.6 V I =-500mA, I =-50mA C B Transition Frequency f 200 MHz V =-20V, I =-50mA, f=100MHz T CE C Delay Time t 10 ns d V =-3V, I =-150mA, I =-15mA CC C B1 t Rise Time 40 ns r t Storage Time 80 ns s V =-3V, I =-150mA, I =I =-15mA CC C B1 B2 t Fall Time 30 ns f C V =-10V, I =0,f=100KHz Output Capacitance 8pF cbo CB E C V =-2V, I =0, f=100KHz Collector Output Capacitance 30 pF ibo EB C *.Pulse test: Pulse Width300s,Duty Cycle2.0%. Rev.3-2-09062019 2/4 MCCSEMI.COM