PZT2222A Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant Suffix Designates RoHS Plastic Encapsulate Compliant. See Ordering Information) Transistors Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Parameter Symbol Rating Unit Collector-Base Voltage V 75 V CBO V Collector-Emitter Voltage 40 V SOT-223 CEO V Emitter-Base Voltage 6 V EBO Collector Current I 0.6 A C A Collector Power Dissipation P 1 C W Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, G <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. H D J E 4 Marking: ZT2222A C B 2 3 1 Internal Structure F K 2,4 DIMENSIONS INCHES MM DIM NOTE 1 MIN MAX MIN MAX A 0.248 0.264 6.30 6.70 1.BASE 2,4.COLLECTOR B 0.130 0.146 3.30 3.70 3 3.EMITTER C 0.264 0.287 6.70 7.30 D 0.001 0.004 0.02 0.10 E 0.114 0.122 2.90 3.10 F 0.091 2.30 TYP. G --- 0.071 --- 1.80 H 0.009 0.014 0.23 0.35 J 0.030 --- 0.75 --- K 0.026 0.033 0.66 0.84 Rev.3-3-12012020 1/4 MCCSEMI.COMPZT2222A Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =10A, I =0 Collector-Base Breakdown Voltage 75 V (BR)CBO C E Collector-Emitter Breakdown Voltage V 40 V I =10mA, I =0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I =10A, I =0 (BR)EBO E C I V =60V,I =0 Collector Cutoff Current 10 nA CBO CB E I V =3V,I =0 Emiiter Cutoff Current 10 nA EBO EB C h V =10V, I =0.1mA 35 FE1 CE C h 50 V =10V, I =1mA FE2 CE C h V =10V, I =10mA 75 FE3 CE C (Note2) DC Current Gain h V =10V, I =150mA 100 FE4 CE C h V =1V, I =150mA 50 FE5 CE C h 40 V =10V, I =500mA FE6 CE C 0.3 V I =150mA, I =15mA C B Collector-Emitter Saturation Voltage V CE(sat) I =500mA, I =50mA 1.0 V C B I =150mA, I =15mA 1.2 V C B V Base-Emitter Saturation Voltage BE(sat) 2.0 V I =500mA, I =50mA C B Transition Frequency f 300 MHz V =20V, I =20mA, f=100MHz T CE C C V =10V, I =0, f=1MHz, Output Capacitance 8 pF ob CB E t V =30V, V =0.5V Delay Time 10 ns d CC BE(OFF) I =150mA, I =15mA Rise Time t 25 ns C B1 r Storage Time t 225 ns V =30V, I =150mA s CC C t I =I =15mA Fall Time 60 ns f B1 B2 Note: 2.Pluse Width 300s, Duty Cycle 2.0% Rev.3-3-12012020 2/4 MCCSEMI.COM