TIP100,TIP101,TIP102 Features Low Collector-Emitter Saturation Voltage High DC Current Gain NPN Plastic Monolithic Construction with Built-in Base-Emitter Shunt Resistors Halogen Free Available Upon Request By Adding Suffix-H Medium-Power Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Silicon Transistors Lead Free Finish/RoHS Compliant (Note1) Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 TO-220 Storage Temperature Range: -55 to +150 Thermal Resistance: 1.56 /W Junction to Case C B F Parameter Symbol Rating Unit S Q TIP100 60 T V Collector-Base Voltage TIP101 80 V CBO A U TIP102 100 1 2 3 TIP100 60 H Collector-Emitter V TIP101 80 V CEO Voltage TIP102 100 K V Emitter-Base Voltage 5 V D EBO R I Continuous Collector Current 8 A C J G V L N I Peak Collector Current 15 A CM I Base Current 1 A B 1.BASE Power Dissipation T =25C P 80 W C D 2.COLLECTOR 3.EMITTER Note: 1.High Temperature Solder Exemption Applied, see EU Directive Annex 7. DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.560 0.625 14.22 15.88 B 0.380 0.420 9.65 10.67 C 0.140 0.190 3.56 4.82 D 0.020 0.045 0.51 1.14 F 0.139 0.161 3.53 4.09 G 0.090 0.110 2.29 2.79 H ----- 0.250 ----- 6.35 J 0.012 0.025 0.30 0.64 K 0.500 0.580 12.70 14.73 L 0.045 0.060 1.14 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.135 2.54 3.43 R 0.080 0.115 2.04 2.92 S 0.045 0.055 1.14 1.39 T 0.230 0.270 5.84 6.86 U ----- 0.050 ----- 1.27 V 0.045 ----- 1.15 ----- Rev.3-1-0 1012019 1/3 MCCSEMI.COMTIP100,TIP101,TIP102 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions TIP100 60 Collector-Emitter V I =30mA, I =0 TIP101 80 V (BR)CEO C B Breakdown Voltage TIP102 100 TIP100 50 A V =60V, I =0 CB E Collector Cutoff Current TIP101 I 50 A V =80V, I =0 CBO CB E TIP102 50 A V =100V, I =0 CB E TIP100 50 A V =30V, I =0 CE B Collector Cutoff Current TIP101 I 50 A V =40V, I =0 CEO CE B TIP102 50 A V =50V, I =0 CE B Emitter Cutoff Current I 8 mA V =5V, I =0 EBO EB C h 1000 20000 V =4V, I =3A FE(1) CE C DC Current Gain h 200 V =4V, I =8A FE(2) CE C 2.0 V I =3A, I =6mA C B V Collector-Emitter Saturation Voltage CE(sat) I =8A, I =80mA 2.5 V C B V V =4V, I =8A Base-Emitter On Voltage 2.8 V BE(on) CE C h I =3.0A, V =4.0V, f=1.0MHz Small-Signal Current Gain 4 fe C CE C V =10V, I =0, f=0.1MHz Output Capacitance 200 pF ob CB E Rev.3-1-01012019 2/3 MCCSEMI.COM