TIP110,TIP111,TIP112 Features The Complementary PNP Types are the TIP115/116/117 Respectively Halogen Free Available Upon Request By Adding Suffix-H Silicon NPN Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Darlington Lead Free Finish/RoHS Compliant (Note1) Suffix Designates RoHS Compliant. See Ordering Information) Power Transistor Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -65 to +150 Storage Temperature Range: -65 to +150 Thermal Resistance: 2.5 /W Junction to Case TO-220 Parameter Symbol Rating Unit TIP110 60 C B F V Collector-Base Voltage TIP111 80 V CBO S Q TIP112 100 T TIP110 60 A Collector-Emitter U V TIP111 80 V CEO Voltage 1 2 3 TIP112 100 H V Emitter-Base Voltage 5 V EBO I Continuous Collector Current 2 A C K I Peak Collector Current 4 A D CM R I Base Current 50 mA B J G V L N Power Dissipation T =25C P 2 W A D Power Dissipation T =25C P 50 W C D 1.BASE Note: 1.High Temperature Solder Exemption Applied, see EU Directive Annex 7. 2.COLLECTOR 3.EMITTER DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.560 0.625 14.22 15.88 B 0.380 0.420 9.65 10.67 C 0.140 0.190 3.56 4.82 D 0.020 0.045 0.51 1.14 F 0.139 0.161 3.53 4.09 G 0.090 0.110 2.29 2.79 H ----- 0.250 ----- 6.35 J 0.012 0.025 0.30 0.64 K 0.500 0.580 12.70 14.73 L 0.045 0.060 1.14 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.135 2.54 3.43 R 0.080 0.115 2.04 2.92 S 0.045 0.055 1.14 1.39 T 0.230 0.270 5.84 6.86 U ----- 0.050 ----- 1.27 V 0.045 ----- 1.15 ----- Rev.3-2-12012020 1/3 MCCSEMI.COMTIP110,TIP111,TIP112 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions TIP110 60 Collector-Emitter V I =30mA, I =0 TIP111 80 V (BR)CEO C B Breakdown Voltage TIP112 100 TIP110 V =60V, I =0 CB E Collector Cutoff Current TIP111 I 1 mA V =80V, I =0 CBO CB E TIP112 V =100V, I =0 CB E TIP110 V =30V, I =0 CE B Collector Cutoff Current TIP111 I 2 mA V =40V, I =0 CEO CE B TIP112 V =50V, I =0 CE B Emitter Cutoff Current I 2 mA V =5V, I =0 EBO EB C h 1000 V =4V, I =1A FE(1) CE C DC Current Gain h 500 V =4V, I =2A FE(2) CE C Collector-Emitter Saturation Voltage V 2.5 V I =2A, I =8mA CE(sat) C B V V =4V, I =2A Base-Emitter Voltage 2.8 V BE CE C C V =10V, I =0, f=0.1MHz Output Capacitance 100 pF ob CB E Rev.3-2-12012020 2/3 MCCSEMI.COM