TIP115,TIP116,TIP117 Features High DC Current Gain Low Collector-Emitter Saturation Voltage PNP Epitaxial Complementary to TIP110/111/112 Halogen Free Available Upon Request By Adding Suffix-H Silicon Darlington Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Transistors Lead Free Finish/RoHS Compliant (Note1) Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: - 55 to +150 TO-220 Storage Temperature Range: - 55 to +150 Thermal Resistance: 2.5 /W Junction to Case C B F Parameter Symbol Rating Unit S Q TIP115 -60 T V Collector-Base Voltage TIP116 -80 V CBO A U TIP117 -100 1 2 3 TIP115 -60 H Collector-Emitter V TIP116 -80 V CEO Voltage TIP117 -100 K V Emitter-Base Voltage -5 V D EBO R I Continuous Collector Current -2 A C J G V L N I Peak Collector Current -4 A CM I Base Current -50 mA B 1.BASE Power Dissipation T =25C P 2 W A D 2.COLLECTOR 3.EMITTER Power Dissipation T =25C P 50 W C D Note: 1.High Temperature Solder Exemption Applied, see EU Directive Annex 7. DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.560 0.625 14.22 15.88 B 0.380 0.420 9.65 10.67 C 0.140 0.190 3.56 4.82 D 0.020 0.045 0.51 1.14 F 0.139 0.161 3.53 4.09 G 0.090 0.110 2.29 2.79 H ----- 0.250 ----- 6.35 J 0.012 0.025 0.30 0.64 K 0.500 0.580 12.70 14.73 L 0.045 0.060 1.14 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.135 2.54 3.43 R 0.080 0.115 2.04 2.92 S 0.045 0.055 1.14 1.39 T 0.230 0.270 5.84 6.86 U ----- 0.050 ----- 1.27 V 0.045 ----- 1.15 ----- Rev.3-1-0 1012019 1/3 MCCSEMI.COMTIP115,TIP116,TIP117 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions TIP115 -60 Collector-Emitter V I =-30mA, I =0 TIP116 -80 V (BR)CEO C B Breakdown Voltage TIP117 -100 TIP115 V =-60V, I =0 CB E Collector Cutoff Current TIP116 I -1 mA V =-80V, I =0 CBO CB E TIP117 V =-100V, I =0 CB E TIP115 V =-30V, I =0 CE B Collector Cutoff Current TIP116 I -2 mA V =-40V, I =0 CEO CE B TIP117 V =-50V, I =0 CE B Emitter Cutoff Current I -2 mA V =-5V, I =0 EBO EB C h 1000 V =-4V, I =-1A FE(1) CE C DC Current Gain h 500 V =-4V, I =-2A FE(2) CE C Collector-Emitter Saturation Voltage V -2.5 V I =-2A, I =-8mA CE(sat) C B V V =-4V, I =-2A Base-Emitter On Voltage -2.8 V BE(on) CE C C V =-10V, I =0, f=0.1MHz Output Capacitance 200 pF ob CB E Rev.3-1-01012019 2/3 MCCSEMI.COM