M58BW16F, M58BW32F Features M58BW16F, M58BW32F 16Mb or 32Mb (x32, Boot Block, Burst) 3.3V Supply Flash Memory Security Features 64-bit unique device identifier (UID) Supply voltage Fast programming V = 2.73.6V (45ns) or DD Write to buffer and program capability (8 double V = 2.53.3V (55ns) DD words) V = V = 2.4V to V for I/O buffers DDQ DDQIN DD Optimized for FDI drivers High performance Common flash interface (CFI) Access times: 45ns and 55ns Fast Program/Erase Suspend feature in each Synchronous burst reads block 75 MHz effective zero wait-state burst read Low power consumption Asynchronous page reads (4 double words) 100A typical Standby current M58BW32F memory organization: Electronic signature Eight 64 Kbit small parameter blocks Manufacturer code: 0020h Four 128 Kbit large parameter blocks Top device codes: Sixty-two 512 Kbit main blocks M58BW32FT: 8838h M58BW16F memory organization: M58BW16FT: 883Ah Eight 64 Kbit parameter blocks Bottom device codes: Thirty-one 512 Kbit main blocks M58BW32FB: 8837h Hardware block protection M58BW16FB: 8839h WP pin to protect any block combination from Automotive device grade 3: PROGRAM and ERASE operations Temperature: 40 to 125 C PEN signal for program/erase enable Automotive grade certified Irreversible modify protection (OTP like) on 128 Kbits: Block 1 (bottom device) or block 72 (top device) in the M58BW32F Blocks 2 and 3 (bottom device) or blocks 36 and 35 (top device) in the M58BW16F CCMTD-1725822587-8496 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m58bw 16-32f.pdf - Rev. D 6/18 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.M58BW16F, M58BW32F Features Part Numbering Information Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack- ages or speed, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Table 1: Part Number Information Scheme Part Number Category Category Details Device type M58 = Parallel Flash memory Architecture B = Burst mode Operating voltage W = 2.7V to 3.6V V range for 45ns speed class DD 2.5V to 3.3V V range for 55ns speed class DD 2.4V to V V range for 45ns and 55ns speed classes DD DDQ Device function/density 32F = 32Mb (x32), boot block, burst, 0.11m technology 16F = 16Mb (x32), boot block, burst, 0.11m technology Array matrix T = Top boot B = Bottom boot Speed 4 = 45ns 5 = 55ns Package T = PQFP80 ZA = LBGA80, 1.0mm pitch 1 Temperature range 3 = Automotive grade certified, 40 to 125 C Packing Option Blank = Standard packing T = Tape and reel packing F = ECOPACK package, tape and reel 24mm packing Note: 1. Qualified and characterized according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC Q001 and Q002 or equivalent. CCMTD-1725822587-8496 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m58bw 16-32f.pdf - Rev. D 6/18 EN 2013 Micron Technology, Inc. All rights reserved.