512Mb: x8/x16, 3V, MT28EW Embedded Parallel NOR Features Parallel NOR Flash Embedded Memory MT28EW512ABA BLANK CHECK operation to verify an erased block Features CYCLIC REDUNDANCY CHECK (CRC) operation to Single-level cell (SLC) technology verify a program pattern Density: 512Mb V /WP protection PP Supply voltage Protects first or last block regardless of block V = 2.73.6V (program, erase, read) CC protection settings V = 1.65 - V (I/O buffers) CCQ CC Software protection Asynchronous random/page read Volatile protection Page size: 16 words or 32 bytes Nonvolatile protection Page access: 20ns Password protection Random access: 95ns (V = V = 2.7-3.6V) CC CCQ Extended memory block Random access: 100ns (V = 1.65-V ) CCQ CC 128-word (256-byte) block for permanent, secure Buffer program (512-word program buffer) identification 2.0 MB/s (TYP) when using full buffer program Programmed or locked at the factory or by the 2.5 MB/s (TYP) when using accelerated buffer customer program (V ) HH JESD47-compliant Word/Byte program: 25us per word (TYP) 100,000 (minimum) ERASE cycles per block Block erase (128KB): 0.2s (TYP) Data retention: 20 years (TYP) Memory organization Package Uniform blocks: 128KB or 64KW each 56-pin TSOP, 14 x 20mm (JS) x8/x16 data bus 64-ball LBGA, 11 x 13mm (PC) Program/erase suspend and resume capability 56-ball VFBGA, 7 x 9mm (PN) Read from another block during a PROGRAM RoHS-compliant, halogen-free packaging SUSPEND operation Operating temperature Read or program another block during an ERASE Ambient: 40C to +85C SUSPEND operation Unlock bypass, block erase, chip erase, and write to buffer capability PDF: 09005aef855e354a Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 mt28ew generation-b 512mb.pdf - Rev. I 05/18 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.512Mb: x8/x16, 3V, MT28EW Embedded Parallel NOR Features Part Numbering Information For available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Chart MT 28E W 512 A B A 1 H JS - 0 S IT ES Micron Technology Production Status Blank = Production Part Family ES = Engineering sample 28E = Embedded Parallel NOR Operating Temperature Voltage IT = 40C to +85C W = 2.73.6V V core CC Special Options Density S = Standard 128 = 128Mb 256 = 256Mb Security Features 512 = 512Mb 0 = Standard default security 01G = 1Gb 1 = OTP configurable 02G = 2Gb Package Codes Stack JS = 56-pin TSOP, 14mm x 20mm A = Single die PN = 56-ball VFBGA, 7mm x 9mm B = Two die PC = 64-ball LBGA, 11mm x 13mm (All packages are lead-free, halogen-free, RoHS-compliant) Device Generation B = 2nd generation Block Structure H = High lock Die Revision L = Low lock A = Rev A Configuration 1 = x8, x16 PDF: 09005aef855e354a Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 mt28ew generation-b 512mb.pdf - Rev. I 05/18 EN 2013 Micron Technology, Inc. All rights reserved.