X-On Electronics has gained recognition as a prominent supplier of MT28EW512ABA1LPN-0SIT NOR Flash across the USA, India, Europe, Australia, and various other global locations. MT28EW512ABA1LPN-0SIT NOR Flash are a product manufactured by Micron. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

MT28EW512ABA1LPN-0SIT Micron

MT28EW512ABA1LPN-0SIT electronic component of Micron
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Part No.MT28EW512ABA1LPN-0SIT
Manufacturer: Micron
Category: NOR Flash
Description: NOR Flash EW-SERIES FLASH NOR SLC 32MX16 VFBGA
Datasheet: MT28EW512ABA1LPN-0SIT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 1560
Multiples : 1
1560 : USD 3.8602
15600 : USD 3.7026
156000 : USD 3.6286
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 13.8643
25 : USD 11.994
50 : USD 11.9505
N/A

Obsolete
   
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RoHS - XON
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We are delighted to provide the MT28EW512ABA1LPN-0SIT from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT28EW512ABA1LPN-0SIT and other electronic components in the NOR Flash category and beyond.

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512Mb: x8/x16, 3V, MT28EW Embedded Parallel NOR Features Parallel NOR Flash Embedded Memory MT28EW512ABA BLANK CHECK operation to verify an erased block Features CYCLIC REDUNDANCY CHECK (CRC) operation to Single-level cell (SLC) technology verify a program pattern Density: 512Mb V /WP protection PP Supply voltage Protects first or last block regardless of block V = 2.73.6V (program, erase, read) CC protection settings V = 1.65 - V (I/O buffers) CCQ CC Software protection Asynchronous random/page read Volatile protection Page size: 16 words or 32 bytes Nonvolatile protection Page access: 20ns Password protection Random access: 95ns (V = V = 2.7-3.6V) CC CCQ Extended memory block Random access: 100ns (V = 1.65-V ) CCQ CC 128-word (256-byte) block for permanent, secure Buffer program (512-word program buffer) identification 2.0 MB/s (TYP) when using full buffer program Programmed or locked at the factory or by the 2.5 MB/s (TYP) when using accelerated buffer customer program (V ) HH JESD47-compliant Word/Byte program: 25us per word (TYP) 100,000 (minimum) ERASE cycles per block Block erase (128KB): 0.2s (TYP) Data retention: 20 years (TYP) Memory organization Package Uniform blocks: 128KB or 64KW each 56-pin TSOP, 14 x 20mm (JS) x8/x16 data bus 64-ball LBGA, 11 x 13mm (PC) Program/erase suspend and resume capability 56-ball VFBGA, 7 x 9mm (PN) Read from another block during a PROGRAM RoHS-compliant, halogen-free packaging SUSPEND operation Operating temperature Read or program another block during an ERASE Ambient: 40C to +85C SUSPEND operation Unlock bypass, block erase, chip erase, and write to buffer capability PDF: 09005aef855e354a Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 mt28ew generation-b 512mb.pdf - Rev. H 11/16 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.512Mb: x8/x16, 3V, MT28EW Embedded Parallel NOR Features Part Numbering Information For available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Chart MT 28E W 512 A B A 1 H JS - 0 S IT ES Micron Technology Production Status Blank = Production Part Family ES = Engineering sample 28E = Embedded Parallel NOR Operating Temperature Voltage IT = 40C to +85C W = 2.73.6V V core CC Special Options Density S = Standard 128 = 128Mb 256 = 256Mb Security Features 512 = 512Mb 0 = Standard default security 01G = 1Gb 1 = OTP configurable 02G = 2Gb Package Codes Stack JS = 56-pin TSOP, 14mm x 20mm A = Single die PN = 56-ball VFBGA, 7mm x 9mm B = Two die PC = 64-ball LBGA, 11mm x 13mm (All packages are lead-free, halogen-free, RoHS-compliant) Device Generation B = 2nd generation Block Structure H = High lock Die Revision L = Low lock A = Rev A Configuration 1 = x8, x16 PDF: 09005aef855e354a Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 mt28ew generation-b 512mb.pdf - Rev. H 11/16 EN 2013 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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