MT28FW01GABA1LPC-0AAT TR Micron

1Gb: x16, 3V, MT28FW, Automotive Parallel NOR Features Parallel NOR Flash Automotive Memory MT28FW01GABA1xPC-0AAT, MT28FW01GABA1xJS-0AAT BLANK CHECK operation to verify an erased block Features CYCLIC REDUNDANCY CHECK (CRC) operation to Single-level cell (SLC) process technology verify a program pattern Supply voltage V /WP protection PP V = 2.73.6V (program, erase, read) CC Protects first or last block regardless of block V = 1.65 - V (I/O buffers) CCQ CC protection settings Asynchronous random/page read Software protection Page size: 16 words Volatile protection Page access: 20ns (V = V = 2.7-3.6V) CC CCQ Nonvolatile protection Random access: 105ns (V = V = 2.7-3.6V) CC CCQ Password protection Random access: 110ns (V = 1.65-V ) CCQ CC Extended memory block Buffer program (512-word program buffer) 512-word block for permanent, secure identifica- 2.0 MB/s (TYP) when using full buffer program tion 2.5 MB/s (TYP) when using accelerated buffer Programmed or locked at the factory or by the program (V ) HH customer Word program: 25us per word (TYP) JESD47-compliant Block erase (128KB): 0.2s (TYP) 100,000 (minimum) ERASE cycles per block Memory organization Data retention: 20 years (TYP) Uniform blocks: 128KB or 64KW each Package x16 data bus 56-pin TSOP, 14mm x 20mm (JS) Program/erase suspend and resume capability 64-ball LBGA, 13mm x 11mm (PC) Read from another block during a PROGRAM RoHS-compliant, halogen-free packaging SUSPEND operation Automotive operating temperature Read or program another block during an ERASE Ambient: 40C to 105C SUSPEND operation Unlock bypass, block erase, chip erase, and write to buffer capability CCMTD-1725822587-3365 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 mt28fw genB 1gb auto.pdf - Rev. H 05/18 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1Gb: x16, 3V, MT28FW, Automotive Parallel NOR Features Part Numbering Information For available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Chart MT 28F W 02G B B A 1 H PC 0 A AT Production Status Micron Technology Blank = Production Device type ES = Engineering sample 28F = Embedded Parallel NOR Flash memory (3V core, page, uniform block) Operating Temperature AT = 40C to +105C (Grade 2 AEC-Q100) Voltage W = 2.73.6V core 1.73.6V I/O Special Options A = Automotive quality Density Security Features 01G = 1Gb 02G = 2Gb 0 = No extra security Stack Package A = Single die JS = 56-lead TSOP, 14mm x 20mm, lead-free, B = Dual die halogen-free, RoHS-compliant PC = 64-ball LBGA, 11mm x 13mm, Device generation lead-free, halogen-free, RoHS-compliant B = Second generation Block structure Die revision H = High lock A = Rev. A L = Low lock Configuration 1 = x16 CCMTD-1725822587-3365 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 mt28fw genB 1gb auto.pdf - Rev. H 05/18 EN 2014 Micron Technology, Inc. All rights reserved.