MT28FW02GBBA1HPC-0AAT Micron

2Gb: x16, 3V, MT28FW, Automotive Parallel NOR Features Parallel NOR Flash Automotive Memory MT28FW02GBBA1HPC-0AAT, MT28FW02GBBA1LPC-0AAT BLANK CHECK operation to verify an erased block Features CYCLIC REDUNDANCY CHECK (CRC) operation to 2Gb stacked device (Two 1Gb die) verify a program pattern Single-level cell (SLC) process technology V /WP protection PP Supply voltage Protects first or last block regardless of block V = 2.73.6V (program, erase, read) CC protection settings V = 1.65V (I/O buffers) CCQ CC Software protection Asynchronous random/page read Volatile protection Page size: 16 words Nonvolatile protection Page access: 20ns (V = V = 2.73.6V) CC CCQ Password protection Random access: 105ns (V = V = 2.73.6V) CC CCQ Extended memory block Random access: 110ns (V = 1.65V ) CCQ CC 512-word block for permanent, secure identifica- Buffer program (512-word program buffer) tion 2.0 MB/s (TYP) when using full buffer program Programmed or locked at the factory or by the 2.5 MB/s (TYP) when using accelerated buffer customer program (V ) HH JESD47-compliant Word program: 25s per word (TYP) 100,000 (minimum) ERASE cycles per block Block erase (128KB): 0.2s (TYP) Data retention: 20 years (TYP) Memory organization Package Uniform blocks: 128KB or 64KW each 64-ball LBGA, 11mm x 13mm (PC) x16 data bus RoHS-compliant, halogen-free packaging Program/erase suspend and resume capability Automotive operating temperature Read from another block during a PROGRAM Ambient: 40C to 105C SUSPEND operation Read or program another block during an ERASE SUSPEND operation Unlock bypass, block erase, die erase, and write to buffer capability CCMTD-1718347970-10367 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 mt28fw 2gb automotive.pdf - Rev. F 10/18 EN 2016 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2Gb: x16, 3V, MT28FW, Automotive Parallel NOR Features Part Numbering Information For available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Chart MT 28F W 02G B B A 1 H PC 0 A AT Production Status Micron Technology Blank = Production Device type ES = Engineering sample 28F = Embedded Parallel NOR Flash memory (3V core, page, uniform block) Operating Temperature AT = 40C to +105C (Grade 2 AEC-Q100) Voltage W = 2.73.6V core 1.73.6V I/O Special Options A = Automotive quality Density Security Features 02G = 2Gb 0 = No extra security Stack B = Dual die Package PC = 64-ball LBGA, 11mm x 13mm, Device generation lead-free, halogen-free, RoHS-compliant B = Second generation Block structure Die revision H = High lock A = Rev. A L = Low lock Configuration 1 = x16 CCMTD-1718347970-10367 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 mt28fw 2gb automotive.pdf - Rev. F 10/18 EN 2016 Micron Technology, Inc. All rights reserved.