X-On Electronics has gained recognition as a prominent supplier of MT28F008B3VG9B NAND Flash across the USA, India, Europe, Australia, and various other global locations. MT28F008B3VG9B NAND Flash are a product manufactured by Micron. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

MT28F008B3VG9B Micron

MT28F008B3VG9B electronic component of Micron
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Part No.MT28F008B3VG9B
Manufacturer: Micron
Category: NAND Flash
Description: NAND Flash Parallel 3.3V 8M-bit 1M x 8 90ns 40-Pin TSOP-I Tray
Datasheet: MT28F008B3VG9B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
23: USD 5.434 ea
Line Total: USD 124.98 
Availability - 0
MOQ: 23  Multiples: 23
Pack Size: 23
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 23
Multiples : 23
23 : USD 5.434

   
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We are delighted to provide the MT28F008B3VG9B from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT28F008B3VG9B and other electronic components in the NAND Flash category and beyond.

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8Mb SMART 3 BOOT BLOCK FLASH MEMORY MT28F008B3 FLASH MEMORY MT28F800B3 3V ONLY, DUAL SUPPLY (SMART 3) FEATURES Eleven erase blocks: 40-Pin TSOP Type I 48-Pin TSOP Type I 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks  Smart 3 technology (B3): 3.3V 0.3V VCC 3.3V 0.3V VPP application programming 5V 10% VPP application/production programming1  Compatible with 0.3m Smart 3 device  Advanced 0.18m CMOS floating-gate process 44-Pin SOP  Address access time: 90ns  100,000 ERASE cycles  Industry-standard pinouts  Inputs and outputs are fully TTL-compatible  Automated write and erase algorithm  Two-cycle WRITE/ERASE sequence  TSOP, SOP and FBGA packaging options  Byte- or word-wide READ and WRITE (MT28F800B3): 1 Meg x 8/512K x 16 GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) Options Marking are low-voltage, nonvolatile, electrically block-eras-  Timing able (flash), programmable memory devices contain- 90ns access -9  Configurations ing 8,388,608 bits organized as 524,288 words (16 bits) 1 Meg x 8 MT28F008B3 or 1,048,576 bytes (8 bits). Writing and erasing the 512K x 16/1 Meg x 8 MT28F800B3 device is done with a VPP voltage of either 3.3V or 5V,  Boot Block Starting Word Address while all operations are performed with a 3.3V VCC. Top (7FFFFh) T Due to process technology advances, 5V VPP is optimal Bottom (00000h) B for application and production programming. These  Operating Temperature Range devices are fabricated with Microns advanced 0.18m Commercial (0C to +70C) None CMOS floating-gate process. Extended (-40C to +85C) ET The MT28F008B3 and MT28F800B3 are organized  Packages into eleven separately erasable blocks. To ensure that MT28F008B3 critical firmware is protected from accidental erasure Plastic 40-pin (standard) TSOP Type I VG Plastic 40-pin (lead free) TSOP Type I VP or overwrite, the devices feature a hardware-protected MT28F800B3 boot block. This block may be used to store code Plastic 48-pin (standard) TSOP Type I WG implemented in low-level system recovery. The Plastic 48-pin (lead free) TSOP Type I WP remaining blocks vary in density and are written and 2 Plastic 44-pin (standard) SOP SG erased with no additional security measures. 2 SP Plastic 44-pin (lead free) SOP Refer to Microns Web site (www.micron.com/flash) NOTE: 1. This generation of devices does not support 12V for the latest data sheet. VPP production programming; however, 5V VPP application production programming can be used with no loss of performance. 2. Contact Factory for availability Part Number Example: MT28F800B3WG-9 09005aef81136a91 Q10.fm - Rev. E 6/04 EN 1 2001 Micron Technology, Inc. All rights reserved. PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY Figure 1: Pin Assignment (Top View) 48-Pin TSOP Type I 44-Pin SOP VPP 1 44 RP# A15 1 48 A16 A18 2 43 WE# A14 2 47 BYTE# A17 3 42 A8 A13 3 46 VSS A7 4 41 A9 A12 4 45 DQ15/(A - 1) A6 5 40 A10 A11 5 44 DQ7 A5 6 39 A11 A10 6 43 DQ14 A4 7 38 A12 A9 7 42 DQ6 A3 8 37 A13 A8 8 41 DQ13 A2 9 36 A14 NC 9 40 DQ5 A1 10 35 A15 NC 10 39 DQ12 A0 11 34 A16 WE# 11 38 DQ4 CE# 12 33 BYTE# RP# 12 37 VCC VSS 13 32 VSS VPP 13 36 DQ11 OE# 14 31 DQ15/(A - 1) WP# 14 35 DQ3 DQ0 15 30 DQ7 NC 15 34 DQ10 DQ8 16 29 DQ14 A18 16 33 DQ2 DQ1 17 28 DQ6 A17 17 32 DQ9 DQ9 18 27 DQ13 A7 18 31 DQ1 DQ2 19 26 DQ5 A6 19 30 DQ8 DQ10 20 25 DQ12 A5 20 29 DQ0 DQ3 21 24 DQ4 A4 21 28 OE# DQ11 22 23 VCC A3 22 27 VSS A2 23 26 CE# A1 24 25 A0 ORDER NUMBER AND PART MARKING MT28F800B3SG-9 B MT28F800B3SP-9 B ORDER NUMBER AND PART MARKING MT28F800B3SG-9 T MT28F800B3SP-9 T MT28F800B3WG-9 B MT28F800B3WP-9 B MT28F800B3SG-9 BET MT28F800B3SP-9 BET MT28F800B3WG-9 T MT28F800B3WP-9 T MT28F800B3SG-9 TET MT28F800B3SP-9 TET MT28F800B3WG-9 BET MT28F800B3WP-9 BET MT28F800B3WG-9 TET MT28F800B3WP-9 TET 40-Pin TSOP Type I A16 A17 1 40 A15 VSS 2 39 A14 NC 3 38 A13 A19 4 37 A12 A10 5 36 A11 DQ7 6 35 A9 DQ6 7 34 A8 DQ5 8 33 WE# DQ4 9 32 RP# VCC 10 31 VPP VCC 11 30 WP# NC 12 29 A18 DQ3 13 28 A7 DQ2 14 27 A6 DQ1 15 26 A5 DQ0 16 25 A4 OE# 17 24 A3 VSS 18 23 A2 CE# 19 22 A1 A0 20 21 ORDER NUMBER AND PART MARKING MT28F008B3VG-9 B MT28F008B3VP-9 B MT28F008B3VG-9 T MT28F008B3VP-9 T MT28F008B3VG-9 BET MT28F008B3VP-9 BET MT28F008B3VG-9 TET MT28F008B3VP-9 TET 09005aef81136a91 Micron Technology, Inc., reserves the right to change products or specifications without notice. Q10.fm - Rev. E 6/04 EN 2 2001 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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