X-On Electronics has gained recognition as a prominent supplier of MT41J128M16JT-125:K DRAM across the USA, India, Europe, Australia, and various other global locations. MT41J128M16JT-125:K DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT41J128M16JT-125:K Micron

MT41J128M16JT-125:K electronic component of Micron
MT41J128M16JT-125:K Micron
MT41J128M16JT-125:K DRAM
MT41J128M16JT-125:K  Semiconductors

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See Product Specifications
Part No. MT41J128M16JT-125:K
Manufacturer: Micron
Category: DRAM
Description: DRAM DDR3 2G 128MX16 FBGA
Datasheet: MT41J128M16JT-125:K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.625 ea
Line Total: USD 3.62 
Availability - 5716
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5716
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 3.625
10 : USD 3.0475
100 : USD 2.629
500 : USD 2.541
1000 : USD 2.387
2448 : USD 2.332
4896 : USD 2.244
11016 : USD 2.167
25704 : USD 2.09

1940
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 2000
Multiples : 2000
2000 : USD 3.7212

16333
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 12
Multiples : 1
12 : USD 5.501
14 : USD 4.8004
100 : USD 4.2914
250 : USD 4.2788
500 : USD 4.1541
1000 : USD 4.0544
2448 : USD 3.8299

77
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 17
Multiples : 1
17 : USD 3.7219
20 : USD 3.2994
100 : USD 3.224
250 : USD 3.0025
500 : USD 2.93
1000 : USD 2.8375
2448 : USD 2.81

   
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We are delighted to provide the MT41J128M16JT-125:K from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT41J128M16JT-125:K and other electronic components in the DRAM category and beyond.

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2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks 1 Options Marking Features Configuration V = V = 1.5V 0.075V DD DDQ 512 Meg x 4 512M4 1.5V center-terminated push/pull I/O 256 Meg x 8 256M8 Differential bidirectional data strobe 128 Meg x 16 128M16 8n-bit prefetch architecture FBGA package (Pb-free) x4, x8 Differential clock inputs (CK, CK ) 78-ball (8mm x 10.5mm) Rev. K DA 8 internal banks 78-ball (8mm x 10.5mm) Rev. N EF Nominal and dynamic on-die termination (ODT) FBGA package (Pb-free) x16 for data, strobe, and mask signals 96-ball (8mm x 14mm) Rev. K JT Programmable CAS READ latency (CL) 96-ball (8mm x 14mm) Rev. N TW Posted CAS additive latency (AL) Timing cycle time Programmable CAS WRITE latency (CWL) based on 938ps CL = 14 (DDR3-2133) -093 t CK 1.07ns CL = 13 (DDR3-1866) -107 Fixed burst length (BL) of 8 and burst chop (BC) of 4 1.25ns CL = 11 (DDR3-1600) -125 (via the mode register set MRS ) 1.5ns CL = 9 (DDR3-1333) -15E Selectable BC4 or BL8 on-the-fly (OTF) 1.87ns CL = 7 (DDR3-1066) -187E Self refresh mode Operating temperature T of 0C to 95C C Commercial (0C T +95C) None C 64ms, 8192 cycle refresh at 0C to 85C Industrial (40C T +95C) IT C 32ms, 8192 cycle refresh at 85C to 95C Revision :K / :N Self refresh temperature (SRT) Automatic self refresh (ASR) 1. Not all options listed can be combined to Note: Write leveling define an offered product. Use the part Multipurpose register catalog search on 2Gb: x4, x8, x16 DDR3 SDRAM Features Table 2: Addressing Parameter 512 Meg x 4 256 Meg x 8 128 Meg x 16 Configuration 64 Meg x 4 x 8 banks 32 Meg x 8 x 8 banks 16 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row addressing 32K (A 14:0 ) 32K (A 14:0 ) 16K (A 13:0 ) Bank addressing 8 (BA 2:0 ) 8 (BA 2:0 ) 8 (BA 2:0 ) Column addressing 2K (A 11, 9:0 ) 1K (A 9:0 ) 1K (A 9:0 ) Page size 1KB 1KB 2KB Figure 1: DDR3 Part Numbers Example Part Number: MT41J256M8DA-125:K - : MT41J Configuration Package Speed Revision :K / :N Revision Configuration 512 Meg x 4 512M4 Temperatu re 256 Meg x 8 256M8 Commercial None 128 Meg x 16 128M16 Industrial temperature IT Package Speed Grade t 78-ball 8mm x 10.5mm FBGA DA -093 CK = 0.938ns, CL = 14 t 78-ball 8mm x 10.5mm FBGA EF -107 CK = 1.071ns, CL = 13 t 96-ball 8mm x 14mm FBGA JT -125 CK = 1.25ns, CL = 11 t 96-ball 8mm x 14mm FBGA TW -15E CK = 1.5ns, CL = 9 t -187E CK = 1.87ns, CL = 7 Note: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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