X-On Electronics has gained recognition as a prominent supplier of MT41J64M16TW-093:J TR DRAM across the USA, India, Europe, Australia, and various other global locations. MT41J64M16TW-093:J TR DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT41J64M16TW-093:J TR Micron

MT41J64M16TW-093:J TR electronic component of Micron
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Part No.MT41J64M16TW-093:J TR
Manufacturer: Micron
Category: DRAM
Description: DRAM DDR3 1G 64MX16 FBGA
Datasheet: MT41J64M16TW-093:J TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 4.2453 ea
Line Total: USD 8490.6 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 5.76

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 4.2453
4000 : USD 4.1056

   
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We are delighted to provide the MT41J64M16TW-093:J TR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT41J64M16TW-093:J TR and other electronic components in the DRAM category and beyond.

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1Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J256M4 32 Meg x 4 x 8 banks MT41J128M8 16 Meg x 8 x 8 banks MT41J64M16 8 Meg x 16 x 8 banks 1 Options Marking Features Configuration V = V = 1.5V 0.075V DD DDQ 256 Meg x 4 256M4 1.5V center-terminated push/pull I/O 128 Meg x 8 128M8 Differential bidirectional data strobe 64 Meg x 16 64M16 8n-bit prefetch architecture FBGA package (Pb-free) x4, x8 Differential clock inputs (CK, CK#) 78-ball (8mm x 11.5mm) Rev. G JP 8 internal banks 78-ball (8mm x 10.5mm) Rev. J DA Nominal and dynamic on-die termination (ODT) FBGA package (Pb-free) x16 for data, strobe, and mask signals 96-ball (8mm x 14mm) Rev. G JT Programmable CAS READ latency (CL) 96-ball (8mm x 14mm) Rev. J TW POSTED CAS ADDITIVE latency (AL) Timing cycle time Programmable CAS WRITE latency (CWL) based on 938ps @ CL = 14 (DDR3-2133) -093 t CK 1.07ns @ CL = 13 (DDR3-1866) -107 Fixed burst length (BL) of 8 and burst chop (BC) of 4 1.25ns @ CL = 11 (DDR3-1600) -125 (via the mode register set [MRS]) 1.5ns @ CL = 9 (DDR3-1333) -15E Selectable BC4 or BL8 on-the-fly (OTF) 1.87ns @ CL = 7 (DDR3-1066) -187E Self refresh mode Operating temperature T of 0C to 95C C Commercial (0C T +95C) None C 64ms, 8192 cycle refresh at 0C to 85C Industrial (40C T +95C) IT C 32ms, 8192 cycle refresh at 85C to 95C Revision :G / :J Self refresh temperature (SRT) Automatic self refresh (ASR) 1. Not all options listed can be combined to Note: Write leveling define an offered product. Use the part Multipurpose register catalog search on 1Gb: x4, x8, x16 DDR3 SDRAM Features Table 2: Addressing Parameter 256 Meg x 4 128 Meg x 8 64 Meg x 16 Configuration 32 Meg x 4 x 8 banks 16 Meg x 8 x 8 banks 8 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row addressing 16K (A[13:0]) 16K (A[13:0]) 8K (A[12:0]) Bank addressing 8 (BA[2:0]) 8 (BA[2:0]) 8 (BA[2:0]) Column addressing 2K (A[11, 9:0]) 1K (A[9:0]) 1K (A[9:0]) Page Size 1KB 1KB 2KB Figure 1: DDR3 Part Numbers Example Part Number: MT41J256M4DA-107:J - : MT41J Configuration Package Speed Revision :G / :J Revision Temperature Configuration Commercial 256 Meg x 4 256M4 None Industrial temperature 128 Meg x 8 128M8 IT 64 Meg x 16 64M16 Speed Grade t Package Rev. Mark -093 CK = 0.098ns, CL = 14 t 78-ball 8mm x 11.5mm FBGA G JP -107 CK = 1.07ns, CL = 13 t 78-ball 8mm x 10.5mm FBGA J DA -125 CK = 1.25ns, CL = 11 t 96-ball 8mm x 14mm FBGA G JT -15E CK = 1.5ns, CL = 9 t TW 96-ball 8mm x 14mm FBGA J -187E CK = 1.87ns, CL = 7 1. Not all options listed can be combined to define an offered product. Use the part catalog search on Note:

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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