X-On Electronics has gained recognition as a prominent supplier of MT41J64M16JT-15E:G DRAM across the USA, India, Europe, Australia, and various other global locations. MT41J64M16JT-15E:G DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT41J64M16JT-15E:G Micron

MT41J64M16JT-15E:G electronic component of Micron
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Part No.MT41J64M16JT-15E:G
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96-Pin FBGA Tray
Datasheet: MT41J64M16JT-15E:G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
394: USD 5.9828 ea
Line Total: USD 2357.22 
Availability - 0
MOQ: 394  Multiples: 394
Pack Size: 394
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 394
Multiples : 394
394 : USD 5.9828

   
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We are delighted to provide the MT41J64M16JT-15E:G from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT41J64M16JT-15E:G and other electronic components in the DRAM category and beyond.

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1Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J256M4 32 Meg x 4 x 8 banks MT41J128M8 16 Meg x 8 x 8 banks MT41J64M16 8 Meg x 16 x 8 banks 1 Options Marking Features Configuration V = V = 1.5V 0.075V DD DDQ 256 Meg x 4 256M4 1.5V center-terminated push/pull I/O 128 Meg x 8 128M8 Differential bidirectional data strobe 64 Meg x 16 64M16 8n-bit prefetch architecture FBGA package (Pb-free) x4, x8 Differential clock inputs (CK, CK ) 78-ball (8mm x 11.5mm) Rev. G JP 8 internal banks FBGA package (Pb-free) x16 Nominal and dynamic on-die termination (ODT) 96-ball (8mm x 14mm) Rev. G JT for data, strobe, and mask signals Timing cycle time Programmable CAS READ latency (CL) 1.07ns CL = 13 (DDR3-1866) -107 POSTED CAS ADDITIVE latency (AL) 1.07ns CL = 12 (DDR3-1866) -107E Programmable CAS WRITE latency (CWL) based on 1.25ns CL = 11 (DDR3-1600) -125 t CK 1.5ns CL = 9 (DDR3-1333) -15E Fixed burst length (BL) of 8 and burst chop (BC) of 4 1.87ns CL = 7 (DDR3-1066) -187E (via the mode register set MRS ) Operating temperature Selectable BC4 or BL8 on-the-fly (OTF) Commercial (0C T +95C) None C Self refresh mode Industrial (40C T +95C) IT C T of 0C to 95C C Automotive (40C T +105C) AT C 64ms, 8192 cycle refresh at 0C to 85C Revision G 32ms, 8192 cycle refresh at 85C to 95C 1. Not all options listed can be combined to Note: Self refresh temperature (SRT) define an offered product. Use the part Automatic self refresh (ASR) catalog search on 1Gb: x4, x8, x16 DDR3 SDRAM Features Table 2: Addressing Parameter 256 Meg x 4 128 Meg x 8 64 Meg x 16 Configuration 32 Meg x 4 x 8 banks 16 Meg x 8 x 8 banks 8 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row addressing 16K (A 13:0 ) 16K (A 13:0 ) 8K (A 12:0 ) Bank addressing 8 (BA 2:0 ) 8 (BA 2:0 ) 8 (BA 2:0 ) Column addressing 2K (A 11, 9:0 ) 1K (A 9:0 ) 1K (A 9:0 ) Page Size 1KB 1KB 2KB Figure 1: DDR3 Part Numbers Example Part Number: MT41J256M4JP-125:G - : MT41J Configuration Package Speed Revision :G Revision Configuration Temperature 256 Meg x 4 256M4 Commercial None 128 Meg x 8 128M8 Industrial temperature IT 64 Meg x 16 64M16 Automotive temperature AT Package Rev. Mark Speed Grade t 78-ball 8mm x 11.5mm FBGA G JP -107 CK = 1.07ns, CL = 13 t 96-ball 8mm x 14mm FBGA G JT -107E CK = 1.07ns, CL = 12 t -125 CK = 1.25ns, CL = 11 t -125E CK = 1.25ns, CL = 10 t -15E CK = 1.5ns, CL = 9 t -187E CK = 1.87ns, CL = 7 Note: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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