X-On Electronics has gained recognition as a prominent supplier of MT42L64M32D1TK-18 AAT:C DRAM across the USA, India, Europe, Australia, and various other global locations. MT42L64M32D1TK-18 AAT:C DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT42L64M32D1TK-18 AAT:C Micron

MT42L64M32D1TK-18 AAT:C electronic component of Micron
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See Product Specifications
Part No.MT42L64M32D1TK-18 AAT:C
Manufacturer: Micron
Category: DRAM
Description: Mobile Low-Power DDR2 SDRAM
Datasheet: MT42L64M32D1TK-18 AAT:C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 14.068 ea
Line Total: USD 42.2

Availability - 0
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3
Multiples : 1
3 : USD 14.068
10 : USD 13.901
25 : USD 13.7392
50 : USD 13.5829
100 : USD 13.4305

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the MT42L64M32D1TK-18 AAT:C from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT42L64M32D1TK-18 AAT:C and other electronic components in the DRAM category and beyond.

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2Gb: x16, x32 Automotive LPDDR2 SDRAM Features Automotive LPDDR2 SDRAM MT42L128M16, MT42L64M32, MT42L64M64 Options Marking Features V : 1.2V L DD2 Ultra low-voltage core and I/O power supplies Configuration V = 1.141.30V DD2 16 Meg x 16 x 8 banks 128M16 V /V = 1.141.30V DDCA DDQ 8 Meg x 32 x 8 banks 64M32 V = 1.701.95V DD1 8 Meg x 32 x 8 banks x 2 die 64M64 Clock frequency range Device type 53310 MHz (data rate range: 106620 Mb/s/pin) LPDDR2 single die/dual die D1, D2 Four-bit prefetch DDR architecture FBGA green package Eight internal banks for concurrent operation 134-ball FBGA (10mm x TK Multiplexed, double data rate, command/address 11.5mm) inputs commands entered on every CK edge 216-ball FBGA (12mm x 12mm) LL Bidirectional/differential data strobe per byte of Timing cycle time data (DQS/DQS ) 1.875ns RL = 8 -18 Programmable READ and WRITE latencies (RL/WL) 2.5ns RL = 6 -25 Programmable burst lengths: 4, 8, or 16 3.0ns RL = 5 -3 Per-bank refresh for concurrent operation Special options On-chip temperature sensor to control self refresh Standard rate Automotive grade (Package-level A Partial-array self refresh (PASR) burn-in) Deep power-down mode (DPD) Operating temperature range Selectable output drive strength (DS) From 30C to +85C WT Clock stop capability From 40C to +85C IT RoHS-compliant, green packaging From 40C to +105C AT Revision :C Table 1: Key Timing Parameters t t 1. For Fast RCD/ RP, contact factory. Note: Speed Clock Rate Data Rate t t 1 Grade (MHz) (Mb/s/pin) RL WL RCD/ RP -18 533 1066 8 4 Typical -25 400 800 6 3 Typical -3 333 667 5 2 Typical PDF: 09005aef8597bf6f Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 2gb automotive lpddr2 u89n.pdf - Rev. B 08/14 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2Gb: x16, x32 Automotive LPDDR2 SDRAM Features Table 2: Single Channel, Single Rank S4 Configuration Addressing Architecture 128 Meg x 16 64 Meg x 32 Die CS0 16 Meg x 16 x 8 banks 8 Meg x 32 x 8 banks configuration CS1 n/a n/a Row addressing 16K (A 13:0 ) 16K (A 13:0 ) Column CS0 1K (A 9:0 ) 512K (A 8:0 ) addressing CS1 n/a n/a Number of die 1 1 Die per rank CS0 1 1 CS1 0 0 on page Ranks per channel 11 Figure 1: 2Gb LPDDR2 Part Numbering MT 42 L 128M16 D1 GU -25A:WTC Micron Technology Design Revision :C = First generation Product Family Operating Temperature 42 = Mobile LPDDR2 SDRAM WT = 30C to +85C IT = 40C to +85C Operating Voltage AT = 40C to +105C L = 1.2V Special Options A = Automotive grade Configuration 128M16 = 128 Meg x 16 Cycle Time 64M32 = 128 Meg x 32 t -18 = 1.875ns, CK RL = 8 64M64 = 64 Meg x 64 t -25 = 2.5ns, CK RL = 6 t -3 = 3.0ns, CK RL = 5 Device Type Package Codes D1 = LPDDR2 single-die TK = FBGA 134-ball 10 x 11.5 D2 = LPDDR2 dual-die LL = FBGA 216-ball 12 x 12 FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. Microns FBGA part marking decoder is available at www.micron.com/decoder. Table 3: Package Codes and Descriptions Package Code BGA SB Package-Z MTG Number TK 168-ball SAC 305 0.7 MTG-1038 LL 216-ball SAC 305 0.8 MTG-832 PDF: 09005aef8597bf6f Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 2gb automotive lpddr2 u89n.pdf - Rev. B 08/14 EN 2014 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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