X-On Electronics has gained recognition as a prominent supplier of MT46H64M32LFBQ-48 WT:C DRAM across the USA, India, Europe, Australia, and various other global locations. MT46H64M32LFBQ-48 WT:C DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT46H64M32LFBQ-48 WT:C Micron

MT46H64M32LFBQ-48 WT:C electronic component of Micron
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Part No.MT46H64M32LFBQ-48 WT:C
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip Mobile LPDDR SDRAM 2Gbit 64Mx32 1.8V 90-Pin VFBGA
Datasheet: MT46H64M32LFBQ-48 WT:C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1440
Multiples : 1
1440 : USD 13.8241
1500 : USD 12.5538
2900 : USD 11.8364
7200 : USD 11.1191
15000 : USD 10.4017
72000 : USD 9.6844
150000 : USD 8.967
N/A

Obsolete
0
MOQ : 1440
Multiples : 1440
1440 : USD 10.7097
2880 : USD 10.4958
N/A

Obsolete
0
MOQ : 125
Multiples : 125
125 : USD 9.3682
N/A

Obsolete
   
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We are delighted to provide the MT46H64M32LFBQ-48 WT:C from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT46H64M32LFBQ-48 WT:C and other electronic components in the DRAM category and beyond.

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2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H128M16LF 32 Meg x 16 x 4 Banks MT46H64M32LF 16 Meg x 32 x 4 Banks MT46H128M32L2 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 32 Meg x 16 x 4 Banks x 4 Options Mark Features V /V DD DDQ V /V = 1.701.95V DD DDQ 1.8V/1.8V H Bidirectional data strobe per byte of data (DQS) Configuration Internal, pipelined double data rate (DDR) 256 Meg x 32 (32 Meg x 16 x 4 banks x 256M32 architecture two data accesses per clock cycle 4) 128 Meg x 32 (16 Meg x 32 x 4 banks x 128M32 Differential clock inputs (CK and CK ) 2) Commands entered on each positive CK edge 128 Meg x 16 (32 Meg x 16 x 4 banks) 128M16 DQS edge-aligned with data for READs center- 64 Meg x 32 (16 Meg x 32 x 4 banks) 64M32 aligned with data for WRITEs Addressing 4 internal banks for concurrent operation JEDEC-standard LF Data masks (DM) for masking write data one mask 2-die stack standard L2 per byte 4-die stack standard L4 Programmable burst lengths (BL): 2, 4, 8, or 16 Plasticgree package 60-ball VFBGA (8mm x 9mm) DD Concurrent auto precharge option is supported 90-ball VFBGA (8mm x 13mm) BQ Auto refresh and self refresh modes PoP (plasticgree package) 1.8V LVCMOS-compatible inputs 168-ball WFBGA DDP (12mm x KQ 2 Temperature-compensated self refresh (TCSR) 12mm) Partial-array self refresh (PASR) 168-ball TFBGA QDP (12mm x SA Deep power-down (DPD) 12mm) Timing cycle time Status read register (SRR) 4.8ns CL = 3 (208 MHz) -48 Selectable output drive strength (DS) 5ns CL = 3 (200 MHz) -5 Clock stop capability Special Options 64ms refresh 32ms for the automotive temperature None range Automotive (package-level burn-in) A Operating temperature range Table 1: Key Timing Parameters (CL = 3) From 40C to +85C IT 1 From 40C to +105C AT Speed Grade Clock Rate Access Time From 25C to +85C WT -48 208 MHz 4.8ns Design revision :C -5 200 MHz 5.0ns 1. Contact factory for availability. Notes: 2. Self refresh supported up to 85 C. Table 2: Configuration Addressing 2Gb Architecture 128 Meg x 16 64 Meg x 32 Configuration 32 Meg x 16 x 4 banks 16 Meg x 32 x 4 banks PDF: 09005aef8541eee0 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 t89m auto lpddr.pdf - Rev. F 9/14 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2Gb: x16, x32 Automotive LPDDR SDRAM Features Table 2: Configuration Addressing 2Gb (Continued) Architecture 128 Meg x 16 64 Meg x 32 Refresh count 8K 8K Row addressing 16K A 13:0 16K A 13:0 Column addressing 2K A11, A 9:0 1K A 9:0 See Package Block Diagrams for descriptions of signal connections and die configurations for each respective ar- chitecture. Figure 1: 2Gb Mobile LPDDR Part Numbering MT 46 H 64M32 LF KQ -6 A IT :C Micron Technology Design Revision :C = Design generation Product Family 46 = Mobile LPDDR Operating Temperature IT = Industrial (40C to +85C) AT = Automotive (40C to +105C) Operating Voltage WT = Wireless (25C to +85C) H = 1.8/1.8V HC = 1.8/1.2V Special Options (Multiple processing codes are separated by a space and are listed in hierarchical order.) Configuration (depth, width) Blank = None 128 Meg x 16 A = Automotive 64 Meg x 32 128 Meg x 32 Speed Grade 256 Meg x 32 t -48 = 4.8ns CK t -5 = 5ns CK Addressing LF = JEDEC-standard addressing Package Codes L2 = 2-die stack standard addressing DD = 60-ball (8mm x 9mm) VFBGA, green L4 = 4-die stack standard addressing BQ = 90-ball (8mm x 13mm) VFBGA, green KQ = 168-ball (12mm x 12mm) WFBGA, green SA = 168-ball (12mm x 12mm) TFBGA, green FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. Microns FBGA part marking decoder is available at www.micron.com/decoder. PDF: 09005aef8541eee0 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 t89m auto lpddr.pdf - Rev. F 9/14 EN 2013 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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