X-On Electronics has gained recognition as a prominent supplier of MT47H64M16NF-25E AIT:M TR DRAM across the USA, India, Europe, Australia, and various other global locations. MT47H64M16NF-25E AIT:M TR DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT47H64M16NF-25E AIT:M TR Micron

MT47H64M16NF-25E AIT:M TR electronic component of Micron
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Part No.MT47H64M16NF-25E AIT:M TR
Manufacturer: Micron
Category: DRAM
Description: DRAM DDR2 1G 64MX16 FBGA
Datasheet: MT47H64M16NF-25E AIT:M TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.9795 ea
Line Total: USD 4.98 
Availability - 2224
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2224
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 4.9795
10 : USD 4.1975
100 : USD 4.0365
250 : USD 3.8985
500 : USD 3.772
1000 : USD 3.6915
2000 : USD 3.634
4000 : USD 3.5535

   
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We are delighted to provide the MT47H64M16NF-25E AIT:M TR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT47H64M16NF-25E AIT:M TR and other electronic components in the DRAM category and beyond.

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1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 16 Meg x 8 x 8 banks MT47H64M16 8 Meg x 16 x 8 banks 1 Options Marking Features Configuration V = 1.8V 0.1V, V = 1.8V 0.1V DD DDQ 128 Meg x 8 (16 Meg x 8 x 8 banks) 128M8 JEDEC-standard 1.8V I/O (SSTL 18-compatible) 64 Meg x 16 (8 Meg x 16 x 8 banks) 64M16 Differential data strobe (DQS, DQS ) option FBGA package (Pb-free) x16 84-ball FBGA (8mm x 12.5mm) Die NF 4n-bit prefetch architecture Rev :M Duplicate output strobe (RDQS) option for x8 FBGA package (Pb-free) x8 DLL to align DQ and DQS transitions with CK 60-ball FBGA (8mm x 10mm) Die SH 8 internal banks for concurrent operation Rev :M Programmable CAS latency (CL) Timing cycle time Posted CAS additive latency (AL) 2.5ns CL = 5 (DDR2-800) -25E t 2.5ns CL = 6 (DDR2-800) -25 WRITE latency = READ latency - 1 CK 3.0ns CL = 5 (DDR2-667) -3 Selectable burst lengths (BL): 4 or 8 Special option Adjustable data-output drive strength Standard None 64ms, 8192-cycle refresh Automotive grade A On-die termination (ODT) Operating temperature RoHS-compliant Industrial (40C T +95C) IT C Automotive (40C T +105C) AT Supports JEDEC clock jitter specification C Revision :M AEC-Q100 PPAP submission 1. Not all options listed can be combined to Note: 8D response time define an offered product. Use the Part Catalog Search on www.micron.com for product offerings and availability. Table 1: Key Timing Parameters Data Rate (MT/s) t Speed Grade CL = 3 CL = 4 CL = 5 CL = 6 CL = 7 RC (ns) -25E 400 533 800 800 n/a 55 -25E 400 533 667 800 n/a 55 -3 400 533 667 n/a n/a 55 Table 2: Addressing Parameter 128 Meg x 8 64 Meg x 16 Configuration 16 Meg x 8 x 8 banks 8 Meg x 16 x 8 banks Refresh count 8K 8K Row address A 13:0 (16K) A 12:0 (8K) PDF: 09005aef85a711f4 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 1gb ddr2 ait-aat u88b.pdf Rev. C 6/18 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1Gb: x8, x16 Automotive DDR2 SDRAM Features Table 2: Addressing (Continued) Parameter 128 Meg x 8 64 Meg x 16 Bank address BA 2:0 (8) BA 2:0 (8) Column address A 9:0 (1K) A 9:0 (1K) Figure 1: 1Gb DDR2 Part Numbers MT 47 H 32M16 NF -25E IT :H Micron Technology Design Revision :H/:M revision Product Family Operating Temperature 47 = DDR2 SDRAM IT = Industrial temperature AT = Automotive temperature Operating Voltage H = 1.8V V CMOS DD Special Options Blank = No special options Configuration A = Automotive grade 128M8 = 128 Meg x 8 64M16 = 64 Meg x 16 Cycle Time t -3 = CK = 3.0ns, CL = 5 Package Codes t -25 = CK = 2.5ns, CL = 6 HR = 84-ball FBGA, 8mm x 12.5mm t -25E = CK = 2.5ns, CL = 5 NF = 84-ball FBGA, 8mm x 12.5mm SH = 60-ball FBGA, 8mm x 10mm Note: 1. Not all speeds and configurations are available in all packages. FBGA Part Number System Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Microns Web site:

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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