X-On Electronics has gained recognition as a prominent supplier of MT4HTF3264AY-667D3 Memory Modules across the USA, India, Europe, Australia, and various other global locations. MT4HTF3264AY-667D3 Memory Modules are a product manufactured by Micron. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

MT4HTF3264AY-667D3 Micron

MT4HTF3264AY-667D3 electronic component of Micron
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Part No.MT4HTF3264AY-667D3
Manufacturer: Micron
Category: Memory Modules
Description: DRAM Module DDR2 SDRAM 256Mbyte 240UDIMM Tray
Datasheet: MT4HTF3264AY-667D3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4: USD 18.4852 ea
Line Total: USD 73.94

Availability - 0
MOQ: 4  Multiples: 1
Pack Size: 1
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0
Ship by Mon. 05 Aug to Fri. 09 Aug
MOQ : 4
Multiples : 1
4 : USD 18.4852

   
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We are delighted to provide the MT4HTF3264AY-667D3 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT4HTF3264AY-667D3 and other electronic components in the Memory Modules category and beyond.

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128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM Features DDR2 SDRAM UDIMM MT4HTF1664AY 128MB MT4HTF3264AY 256MB MT4HTF6464AY 512MB Figure 1: 240-Pin UDIMM (MO-237 R/C C) Features Module height 30.0mm (1.18in) 240-pin, unbuffered dual in-line memory module (UDIMM) Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 128MB (16 Meg x 64), 256MB (32 Meg x 64), 512MB (64 Meg x 64) Options Marking V = V = 1.8V DD DDQ Operating temperature V = 1.73.6V DDSPD None Commercial (0C T +70C) A JEDEC-standard 1.8V I/O (SSTL 18-compatible) 1 I Industrial (40C T +85C) A Differential data strobe (DQS, DQS ) option Package 4n-bit prefetch architecture 240-pin DIMM (lead-free) Y 2 Multiple internal device banks for concurrent Frequency/CL 4 operation 2.5ns CL = 5 (DDR2-800) -80E 4 Programmable CAS latency (CL) 2.5ns CL = 6 (DDR2-800) -800 3.0ns CL = 5 (DDR2-667) -667 Posted CAS additive latency (AL) 3 t 3.75ns CL = 4 (DDR2-533) -53E WRITE latency = READ latency - 1 CK 3 5.0ns CL = 3 (DDR2-400) -40E Programmable burst lengths (BL): 4 or 8 1. Contact Micron for industrial temperature Notes: Adjustable data-output drive strength module offerings. 64ms, 8192-cycle refresh 2. CL = CAS (READ) latency. On-die termination (ODT) 3. Contact Micron for product availability. Serial presence detect (SPD) with EEPROM 4. Not available in 128MB and 256MB. Gold edge contacts Single rank Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 -800 PC2-6400 800 667 533 400 15 15 55 -667 PC2-5300 667 553 400 15 15 55 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef80ed6fda Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf4c16 32 64x64ay Rev. H 3/10 EN 2003 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM Features Table 2: Addressing Parameter 128MB 256MB 512MB Refresh count 8K 8K 8K Row address 8K A 12:0 8K A 12:0 8K A 12:0 Device bank address 4 BA 1:0 4 BA 1:0 8 BA 2:0 Device configuration 256Mb (16 Meg x 16) 512Mb (32 Meg x 16) 1Gb (64 Meg x 16) Column address 512 A 8:0 1K A 9:0 1K A 9:0 Module rank address 1 S0 1 S0 1 S0 Table 3: Part Numbers and Timing Parameters 128MB Modules (End of Life) 1 Base device: MT47H16M16, 256Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT4HTF1664A(I)Y-667 128MB 16 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 MT4HTF1664A(I)Y-53E 128MB 16 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4 MT4HTF1664A(I)Y-40E 128MB 16 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3 Table 4: Part Numbers and Timing Parameters 256MB Modules 1 Base device: MT47H32M16, 512Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT4HTF3264A(I)Y-80E 256MB 32 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT4HTF3264A(I)Y-800 256MB 32 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT4HTF3264A(I)Y-667 256MB 32 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 MT4HTF3264A(I)Y-53E 256MB 32 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4 MT4HTF3264A(I)Y-40E 256MB 32 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3 Table 5: Part Numbers and Timing Parameters 512MB Modules 1 Base device: MT47H64M16, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT4HTF6464A(I)Y-80E 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT4HTF6464A(I)Y-800 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT4HTF6464A(I)Y-667 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 MT4HTF6464A(I)Y-53E 512MB 64 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4 MT4HTF6464A(I)Y-40E 512MB 64 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3 1. The data sheet for the base device can be found on Microns Web site. Notes: 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT4HTF3264AY-667E1. PDF: 09005aef80ed6fda Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf4c16 32 64x64ay Rev. H 3/10 EN 2003 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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