MTA9ADF1G72PKIZ-3G2E1 Micron

8GB (x72, ECC, SR) 288-Pin DDR4 VLP MiniRDIMM Features DDR4 SDRAM VLP MiniRDIMM MTA9ADF1G72PKIZ 8GB Figure 1: 288-Pin VLP MiniRDIMM (MO-314, R/C- Features ZZ) DDR4 functionality and operations supported as Module Height: 18.75mm (0.738 in) defined in the component data sheet 288-pin, very low profile registered dual in-line mini memory module (VLP MiniRDIMM) Fast data transfer rate: PC4-2666, PC4-3200 8GB (1 Gig x 72) V = 1.20V (NOM) DD Options Marking V = 2.5V (NOM) PP Operating temperature V = 2.5V (NOM) DDSPD Industrial (-40C T +95C) I OPER Supports ECC error detection and correction Package Nominal and dynamic on-die termination (ODT) for 288-pin MiniDIMM (halogen-free) Z data, strobe, and mask signals Frequency/CAS latency Low-power auto self refresh (LPASR) 0.625ns CL = 22 (DDR4-3200) -3G2 Data bus inversion (DBI) for data bus 0.75ns CL = 19 (DDR4-2666) -2G6 On-die V generation and calibration REFDQ Single-rank 2 On-board I C temperature sensor with integrated serial presence-detect (SPD) EEPROM 16 internal banks 4 groups of 4 banks each Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) CL = t t t 10 RCD RP RC PC4- 24 22 21 20 19 18 17 16 15 14 13 12 11 9 (ns) (ns) (ns) -3G2 3200 3200, 3200, 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 13.75 13.75 45.75 2933 2933 -2G9 2933 2933 2933 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.32 14.32 46.32 -2G6 2666 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 CCMTD-341111752-10428 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 adf9c1gx72pkiz.pdf - Rev. D 8/18 EN 2016 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Speed Grade8GB (x72, ECC, SR) 288-Pin DDR4 VLP MiniRDIMM Features Table 1: Key Timing Parameters (Continued) Data Rate (MT/s) CL = t t t 10 RCD RP RC PC4- 24 22 21 20 19 18 17 16 15 14 13 12 11 9 (ns) (ns) (ns) -2G3 2400 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G1 2133 2133 2133 1866 1866 1600 1600 1333 13.5 13.5 46.5 1333 Table 2: Addressing Parameter 8GB Row address 64K A 15:0 Column address 1K A 9:0 Device bank group address 4 BG 1:0 Device bank address per group 4 BA 1:0 Device configuration 8Gb (1 Gig x 8), 16 banks Module rank address 1 CS0 n Table 3: Part Numbers and Timing Parameters 8GB Modules 1 Base device: MT40A1G8, 8Gb DDR4 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MTA9ADF1G72PKIZ-3G2 8GB 1 Gig x 72 25.6 GB/s 0.625/3200 MT/s 22-22-22 MTA9ADF1G72PKIZ-2G6 8GB 1 Gig x 72 21.3 GB/s 0.75ns/2666 MT/s 19-19-19 Notes: 1. The data sheet for the base device can be found on micron.com. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MTA9ADF1G72PKIZ-3G2E1. CCMTD-341111752-10428 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 adf9c1gx72pkiz.pdf - Rev. D 8/18 EN 2016 Micron Technology, Inc. All rights reserved. Speed Grade