2N3713 2N3715 2N3714 2N3716 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (T =25C) 2N3713 2N3714 C SYMBOL 2N3715 2N3716 UNITS Collector-Base Voltage V 80 100 V CBO Collector-Emitter Voltage V 60 80 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 10 A C Continuous Base Current I 4.0 A B Power Dissipation P 150 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 1.17 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V =Rated V , V=1.5V 1.0 mA CEV CE CBO BE I V =Rated V , V =1.5V, T=150C 10 mA CEV CE CEO BE C I V=7.0V 5.0 mA EBO EB BV I =200mA (2N3713, 2N3715) 60 V CEO C BV I =200mA (2N3714, 2N3716) 80 V CEO C V I =5.0A, I =0.5A (2N3713, 2N3714) 1.0 V CE(SAT) C B V I =5.0A, I =0.5A (2N3715, 2N3716) 0.8 V CE(SAT) C B V I =5.0A, I =0.5A (2N3713, 2N3714) 2.0 V BE(SAT) C B V I =5.0A, I =0.5A (2N3715, 2N3716) 1.5 V BE(SAT) C B V V =2.0V, I=3.0A 1.5 V BE(ON) CE C h V =2.0V, I =1.0A (2N3713, 2N3714) 40 120 FE CE C h V =2.0V, I =1.0A (2N3715, 2N3716) 50 150 FE CE C h V =2.0V, I =3.0A (2N3713, 2N3714) 15 FE CE C h V =2.0V, I =3.0A (2N3715, 2N3716) 30 FE CE C f V =10V, I =0.5A, f=1.0MHz 4.0 MHz T CE C t I =5.0A, I =I=0.5A 0.4 s r C B1 B2 t I =5.0A, I =I=0.5A 0.3 s s C B1 B2 t I =5.0A, I =I=0.5A 0.4 s f C B1 B2 R2 (18-June 2013)2N3713 2N3715 2N3714 2N3716 SILICON NPN TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE R2 LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R2 (18-June 2013) www.centralsemi.com