EMSC Embedded & Wirebond
Silicon Capacitor
Rev 3.5
Key features Key applications
n Ultra low profile (100m) n Any demanding applications, such as
medical, aerospace, automotive industrial
n Ultra high stability of capacitance value:
n Supply decoupling / filtering of active device
w Temperature 0,5% (-55C to +150C)
n High reliability applications
w Voltage <0.1%/Volts
n Devices with battery operations
w Negligible capacitance loss through ageing
n High temperature applications
n Low leakage current down to 100pA
n Volume limited applications
n High reliability
n High operating temperature (up to 150C)
Thanks to the unique IPDiA Silicon capacitor
The IPDiA technology features high reliability, up
technology, most of the problems encountered in
to 10 times better than alternative capacitor
demanding applications can be solved. technologies, such as Tantalum or MLCC, and
EMbedded Silicon Capacitors are available with eliminates cracking phenomena.
thicknesses down to 80m and are the most
Silicon Capacitor technology also offers a very
appropriate solution for Chip On Board, Chip On
stable capacitor value over the full operating
Foil, Chip On Glass, Chip On Ceramic, flip chip voltage & temperature range, with a high and
and embedded applications, when designers are stable insulation resistance.
looking at utmost decoupling behaviours.
This Silicon based technology is ROHS compliant
EMSC are optimized for laminate substrate
and compatible with lead free reflow soldering
package, rigid/flex PCB, FR4, ceramic, glass, process.
leadfr ame or foil platforms.
The Silicon capacitor technology offers a capacitor
integration capability (up to 250nF/mm ) which
allows downsizing compared to existing
solutions.
EMSC
Electrical Specification
Capacitance value
Parameters Value
10 15 22 33 39 47 68
Capacitance range 390pF to 4.7F
(***)
Contact Contact Contact Contact 390pF/0202/30V 470pF/0202/30V 680pF/0202/30V 15%
Capacitance tolerances
10pF
IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales 935 121 72C 339 935 121 72C 347 935 121 72C 368
Operating temperature
(**)
-55 to 150 C
1nF/0202/30V Contact Contact Contact Contact Contact Contact
range
0.1nF
935 121 72C 410 IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales
Storage temperatures - 70 to 165 C
10nF/0202/30V Contact Contact 33nF/0404/30V Contact Contact Contact
1nF
Temperature coefficient 0.5%, from -55 to +150C
935 121 72C 510 IPDIA Sales IPDIA Sales 935 121 72F 533 IPDIA Sales IPDIA Sales IPDIA Sales
100nF/0404/11V Contact Breakdown Voltage (BV) 30V, 11V
935 121 42F 610 Contact 220nF/0505/11V Contact IPDIA Sales Contact Contact
Capacitance variation
10nF
0.1 % /V (from 0 V to RVDC)
100nF/0605/30V IPDIA Sales 935 121 42H 622 IPDIA Sales IPDIA Sales IPDIA Sales
versus RVDC
935 121 72G 610
Equivalent Serial Inductor
1F/1208/11V Contact Max 100 pH
(ESL)
935 121 42S 710 Contact 2.2F/1612/11V 3.3F/1616/11V IPDIA Sales 4.7F/2016/11V
0.1F
1F/1616/30V IPDIA Sales 935 121 42V 722 935 121 42Y 733 935 121 42X 747 Equivalent Serial Resistor
Max 0.1W
935 121 72Y 710
(ESR)
Insulation resistance 100GW min @ 3V,25C
(*) 80m thickness on request
Negligible, < 0.001% / 10000h
Aging
(**) For extended temperature range (up to +250C), see Embedded Xtreme Temperature Silicon Capacitor product (EXSC).
FIT<0.017 parts / billions
Reliability
hours
(*)
(***) other values on request Max 100m
Capacitor height
.
Temperature coefficient DC Voltage stability ESL (nH) @25C
PICS vs. MLCC capacitors
MLCC capacitors vs. PICS 0 4 C0O2 GC(N0GPO(NP)vOs.) PvsIC. SP ICS
20
10 1,1
PICS
10 1
0
PICS C0G
PICS
0 0,9
-10
C0G
C0G
C0G
-10 X8R 0,8
X8R -20
X7R X7R
-30 0,7
-20
Z5U X7R
0,6
-40
-30
0,5
-50
-40
0,4
-60
-50
Z5U
0,3
-70
-60
0,2
-80
Y5V
-70 PICS
Y5V 0,1
Y5V
-90
-80
0
-50 0 50 100 150 200 -100
0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000
0 1 2 3 4 5 6 7
Temperature (C)
Capacitance (pF)
Bias voltage (V)
Fig.1 Capacitance change versus temperature
Fig.2 Capacitance change versus voltage Fig.3 ESL versus capacitance value
variation compared to alternative technologies
variation compared to alternative compared to alternative technologies
Part Number
935.121. B. 2. S. U xx Value
10
15
Breakdown
22
Voltage
Size Unit
33
i.e: 100nF/0404 935 121 42F 610 4 = 11V F = 0404 5 = 1 n
G = 0605 0 = 10 f
39
1= 20V H = 0505 1 = 0.1 p 6 = 10 n
C = 0202
47
7= 30V I = 0302 2 = 1 p 7 = 0.1
V = 1612
68
6= 50V S =1208 3 = 10 p 8 = 1
Y = 1616
52=90V V =1216 4 = 0.1 n 9 = 10
X =2016
Termination
Pad finishing in Aluminum ( 3m thickness +/-10%), other finishing available such as copper, nickel or gold.
Applicable for almost all embedded applications.
Parts should be glued with non conductive paste. If conductive glue is used on the backside of the silicon
cap, it is strongly recommended to connect the backside and pads 3&4 to the same level (GND preferred).
Pinning definition & Outline
0202 0203 0303 0404 0505 0605 1208 1612 1616 2016
pin # Symbol Description Typ.
0.58 0.64 0.80 1.00 1.25 1.50 3.00 4.00 4.00 5.00
A
0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05
1, 2 Signal Signal
Comp. 0.58 0.80 0.80 1.00 1.25 1.25 2.00 3.00 4.00 4.00
B
0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05
3, 4 GND Ground
size
c 0,15 0,15 0,15 0,15 0,15 0,15 0,15 0,15 0,15 0,15
d 0,3 0,72 0,97 1,22 2,72 3,72 3,72 4,72
e 0,3 0,72 0,97 1,22 1,72 2,72 3,72 3,72
Packaging
Tape and reel, tray, waffle pack or wafer delivery.
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