X-On Electronics has gained recognition as a prominent supplier of 2PB709BRL,215 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2PB709BRL,215 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2PB709BRL,215 Nexperia

2PB709BRL,215 electronic component of Nexperia
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See Product Specifications
Part No.2PB709BRL,215
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT PNP -50 V -200 mA
Datasheet: 2PB709BRL,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1672 ea
Line Total: USD 0.17 
Availability - 4614
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4614
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1672
10 : USD 0.1111
100 : USD 0.0572
1000 : USD 0.0517
3000 : USD 0.0407
9000 : USD 0.0352
24000 : USD 0.033
45000 : USD 0.0319
99000 : USD 0.0297

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2PB709BRL,215 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2PB709BRL,215 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2PB709BRL 2PB709BSL 50 V, 200 mA PNP general-purpose transistors Rev. 1 28 June 2010 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN complement Nexperia JEDEC 2PB709BRL SOT23 TO-236AB 2PD601BRL 2PB709BSL 2PD601BSL 1.2 Features and benefits Collector current I 200 mA C Two current gain selections AEC-Q101 qualified Small SMD plastic package 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit collector-emitter voltage open base - - 50 V V CEO collector current - - 200 mA I C DC current gain V = 10 V 210 - 460 h FE CE I = 2mA C h group R 210 - 340 FE h group S 290 - 460 FE2PB709BRL 2PB709BSL Nexperia 50 V, 200 mA PNP general-purpose transistors 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1base 3 3 2emitter 3 collector 1 12 2 sym013 3. Ordering information Table 4. Ordering information Type number Package Name Description Version 2PB709BRL - plastic surface-mounted package 3 leads SOT23 2PB709BSL 4. Marking Table 5. Marking codes 1 Type number Marking code 2PB709BRL MN* 2PB709BSL MP* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 6V EBO I collector current - 200 mA C I peak collector current single pulse - 250 mA CM t 1ms p I peak base current single pulse - 200 mA BM t 1ms p 2PB709BRL 2PB709BSL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 28 June 2010 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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