2PB710ASL,215 Nexperia

2PB710ARL 2PB710ASL 50 V, 500 mA PNP general-purpose transistors Rev. 01 29 October 2008 Product data sheet 1. Product prole 1.1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview 1 Type number Package NPN complement NXP JEDEC 2PB710ARL SOT23 TO-236AB 2PD602ARL 2PB710ASL 2PD602ASL 2PB710ARL/DG SOT23 TO-236AB 2PD602ARL/DG 2PB710ASL/DG 2PD602ASL/DG 1 /DG: halogen-free 1.2 Features n General-purpose transistors n Two current gain selections n AEC-Q101 qualied n Small SMD plastic package 1.3 Applications n General-purpose switching and amplication 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - - 50 V CEO I collector current - - - 500 mA C 1 h DC current gain V = - 10 V FE CE I = - 150 mA C h group R 120 - 240 FE h group S 170 - 340 FE 1 Pulse test: t 300 s 0.02. p2PB710ARL 2PB710ASL NXP Semiconductors 50 V, 500 mA PNP general-purpose transistors 2. Pinning information Table 3. Pinning Pin Description Simplied outline Graphic symbol 1 base 3 3 2 emitter 3 collector 1 12 2 sym013 3. Ordering information Table 4. Ordering information 1 Type number Package Name Description Version 2PB710ARL - plastic surface-mounted package 3 leads SOT23 2PB710ASL 2PB710ARL/DG 2PB710ASL/DG 1 /DG: halogen-free 4. Marking Table 5. Marking codes 1 Type number Marking code 2PB710ARL SE* 2PB710ASL SD* 2PB710ARL/DG SU* 2PB710ASL/DG ST* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 2PB710AXL 1 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 29 October 2008 2 of 9