X-On Electronics has gained recognition as a prominent supplier of 2PC4081R,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2PC4081R,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2PC4081R,115 Nexperia

Hot 2PC4081R,115 electronic component of Nexperia
2PC4081R,115 Nexperia
2PC4081R,115 Bipolar Transistors - BJT
2PC4081R,115  Semiconductors

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Part No. 2PC4081R,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS GP TAPE-7
Datasheet: 2PC4081R,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6711: USD 0.0194 ea
Line Total: USD 130.19 
Availability - 663807
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ: 6711  Multiples: 1
Pack Size: 1
Availability Price Quantity
663807
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 6711
Multiples : 1
6711 : USD 0.0194

13385
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.19
10 : USD 0.1125
100 : USD 0.0712
500 : USD 0.0448
1000 : USD 0.0352
3000 : USD 0.0308
6000 : USD 0.0275
9000 : USD 0.0242
24000 : USD 0.022

663807
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 3356
Multiples : 1
3356 : USD 0.0194

1861
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 1761
Multiples : 1
1761 : USD 0.0386

160050
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 16130
Multiples : 1
16130 : USD 0.0291

   
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RoHS - XON
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Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
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Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
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Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
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We are delighted to provide the 2PC4081R,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2PC4081R,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2PC4081 NPN general-purpose transistor Rev. 06 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN transistor in a SOT323 (SC-70) plastic package. The PNP complement is 2PA1576. 1.2 Features Low current (max. 150 mA) Low voltage (max. 50 V) 1.3 Applications General-purpose switching Small signal amplification 2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol 1base 3 3 2emitter 3 collector 1 12 2 sym021 3. Ordering information Table 2. Ordering information Type number Package Name Description Version 2PC4081Q SC-70 plastic surface mounted package 3 leads SOT323 2PC4081R 2PC4081SNexperia 2PC4081 NPN general-purpose transistor 4. Marking Table 3. Marking codes 1 Type number Marking code 2PC4081Q Z*Q 2PC4081R Z*R 2PC4081S Z*S 1 * = -: made in Hong Kong * = t: made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 7 V EBO I collector current (DC) - 150 mA C I peak collector current - 200 mA CM I peak base current - 200 mA BM 1 P total power dissipation T 25 C -200 mW tot amb T storage temperature 65 +150 C stg T junction temperature - 150 C j T ambient temperature 65 +150 C amb 1 Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit 1 R thermal resistance from --625 K/W th(j-a) junction to ambient 1 Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 2PC4081 Nexperia B.V. 2009. All rights reserved. Product data sheet Rev. 06 17 November 2009 2 of 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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