X-On Electronics has gained recognition as a prominent supplier of 2PC4081S,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2PC4081S,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2PC4081S,115 Nexperia

2PC4081S,115 electronic component of Nexperia
2PC4081S,115 Nexperia
2PC4081S,115 Bipolar Transistors - BJT
2PC4081S,115  Semiconductors

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See Product Specifications
Part No. 2PC4081S,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS GP TAPE-7
Datasheet: 2PC4081S,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.19 ea
Line Total: USD 0.19 
Availability - 14133
Ship by Fri. 25 Apr to Tue. 29 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
58
Ship by Tue. 06 May to Fri. 09 May
MOQ : 10
Multiples : 10
10 : USD 0.0877
100 : USD 0.0711
300 : USD 0.0539
3000 : USD 0.0437
6000 : USD 0.0398
9000 : USD 0.0378

14133
Ship by Fri. 25 Apr to Tue. 29 Apr
MOQ : 1
Multiples : 1
1 : USD 0.19
10 : USD 0.1163
100 : USD 0.0712
500 : USD 0.0483
1000 : USD 0.0352
3000 : USD 0.0308
6000 : USD 0.0275
9000 : USD 0.0264
24000 : USD 0.022

2441
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 2017
Multiples : 1
2017 : USD 0.1313

162960
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 11195
Multiples : 1
11195 : USD 0.0418

55134
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 11195
Multiples : 1
11195 : USD 0.0418

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
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We are delighted to provide the 2PC4081S,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2PC4081S,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2PC4081 NPN general-purpose transistor Rev. 06 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN transistor in a SOT323 (SC-70) plastic package. The PNP complement is 2PA1576. 1.2 Features Low current (max. 150 mA) Low voltage (max. 50 V) 1.3 Applications General-purpose switching Small signal amplification 2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol 1base 3 3 2emitter 3 collector 1 12 2 sym021 3. Ordering information Table 2. Ordering information Type number Package Name Description Version 2PC4081Q SC-70 plastic surface mounted package 3 leads SOT323 2PC4081R 2PC4081SNexperia 2PC4081 NPN general-purpose transistor 4. Marking Table 3. Marking codes 1 Type number Marking code 2PC4081Q Z*Q 2PC4081R Z*R 2PC4081S Z*S 1 * = -: made in Hong Kong * = t: made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 7 V EBO I collector current (DC) - 150 mA C I peak collector current - 200 mA CM I peak base current - 200 mA BM 1 P total power dissipation T 25 C -200 mW tot amb T storage temperature 65 +150 C stg T junction temperature - 150 C j T ambient temperature 65 +150 C amb 1 Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit 1 R thermal resistance from --625 K/W th(j-a) junction to ambient 1 Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 2PC4081 Nexperia B.V. 2009. All rights reserved. Product data sheet Rev. 06 17 November 2009 2 of 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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