2PD2150,115 Nexperia

2PD2150 20 V, 3 A NPN low V (BISS) transistor CEsat Rev. 02 2 January 2007 Product data sheet 1. Product prole 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a medium power CEsat SOT89 (SC-62/TO-243) at lead Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB1424. 1.2 Features n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n High efciency due to less heat generation n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications n DC-to-DC conversion n MOSFET gate driving n Motor control n Charging circuits n Power switches (e.g. motors, fans) n Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 20 V CEO I collector current - - 3 A C I peak collector current single pulse --5 A CM t 1ms p 1 V collector-emitter I = 2 A I = 0.1 A - 0.2 0.5 V CEsat C B saturation voltage 1 Pulse test: t 300 s 0.02. p2PD2150 Nexperia 20 V, 3 A NPN low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplied outline Symbol 1 emitter 2 2 collector 3 3 base 1 321 sym042 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2PD2150 SC-62 plastic surface-mounted package collector pad for SOT89 good heat transfer 3 leads 4. Marking Table 4. Marking codes Type number Marking code 2PD2150 M2 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 40 V CBO V collector-emitter voltage open base - 20 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 3 A C I peak collector current single pulse -5 A CM t 1ms p 1 P total power dissipation T 25 C - 0.5 W tot amb 2 -2 W T junction temperature - 150 C j T ambient temperature -65 +150 C amb T storage temperature -65 +150 C stg 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 2PD2150 Nexperia B.V. 2007. All rights reserved. Product data sheet Rev. 02 2 January 2007 2 of 13