X-On Electronics has gained recognition as a prominent supplier of 2PD601ART,235 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2PD601ART,235 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2PD601ART,235 Nexperia

2PD601ART,235 electronic component of Nexperia
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Part No.2PD601ART,235
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN TRANSISTOR
Datasheet: 2PD601ART,235 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1584 ea
Line Total: USD 0.16 
Availability - 31200
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
31200
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1584
10 : USD 0.1034
100 : USD 0.0583
1000 : USD 0.0297
2500 : USD 0.0264
10000 : USD 0.0253
20000 : USD 0.0242
50000 : USD 0.0176

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2PD601ART,235 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2PD601ART,235 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2PD601ART 50 V, 100 mA NPN general-purpose transistor Rev. 01 15 March 2007 Product data sheet 1. Product prole 1.1 General description NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB709ART. 1.2 Features n General-purpose transistor n Small SMD plastic package 1.3 Applications n General-purpose switching and amplication 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 50 V CEO I collector current - - 100 mA C h DC current gain V =10V 210 - 340 FE CE I =2mA C 2. Pinning information Table 2. Pinning Pin Description Simplied outline Symbol 1 base 3 3 2 emitter 3 collector 1 12 2 sym0212PD601ART Nexperia 50 V, 100 mA NPN general-purpose transistor 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2PD601ART - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code 2PD601ART C3* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 100 mA C I peak collector current single pulse - 200 mA CM t 1ms p I peak base current single pulse - 100 mA BM t 1ms p 1 P total power dissipation T 25 C - 250 mW tot amb T junction temperature - 150 C j T ambient temperature -65 +150 C amb T storage temperature -65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2PD601ART Nexperia B.V. 2007. All rights reserved. Product data sheet Rev. 01 15 March 2007 2 of 10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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