BC807-16/-25/-40
Taiwan Semiconductor
Small Signal Product
0.3 Watts, PNP Plastic-Encasulate Transistor
FEATURES
- Ideally suited for automatic insertion
- Epitaxial planar die construction
- For switching, AF driver and amplifer applications
- Complementary NPN type available (BC817)
MECHANICAL DATA
- Case: SOT- 23, Molded plastic
- Terminal: Solderable per MIL-STD-202, method 208
- Case material: Molded plastic, UL flammability
classification rating 94V-0
- Moisture sensitivity: Level 1 per J-STD-020C
- Lead free plating
SOT-23
- Weight: 0.008grams (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted)
A
PARAMETER VALUE
SYMBOL UNIT
Power Dissipation P 0.3 W
D
I
Collector Current - Continuous -0.5 A
C
Junction Temperature T 150
C
J
Storage Temperature Range T -55 to + 150 C
STG
PARAMETER VALUE
SYMBOL UNIT
Collector-Base Breakdown Voltage I = -10 A I = 0 V -50 V
C E CBO
I = -10 mA I = 0 V
Collector-Emitter Breakdown Voltage -45 V
C B CEO
Emitter-Base Breakdown Voltage I = -1 AI = 0 V -5
V
E C EBO
V = -45 V I = 0 -0.1 A
CB E
I
Collector Cut-off Current
CBO
V = -40 V I = 0 -0.2
A
CB B
Emitter Cut-off Current V = -4 V I = 0 I -0.1 A
EB C EBO
at I = -500mA I = 50 mA V
Collector-Emitter Saturation Voltage -0.7 V
C B CE(sat)
Base-Emitter Saturation Voltage at I = -500 mA I = 50 mA V -1.2
V
C B BE(sat)
Transition Frequency V = -5 V I = -10 mA f = 50MHz f 80 MHz
CE C T
807-16 100 250
V = -1 V I = -100 mA h
DC Current Gain 807-25 160 400
CE C FE(1)
807-40 250 600
Version: F14
Document Number: DS_S1404007BC807-16/-25/-40
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25 unless otherwise noted)
Fig. 2 Gain Bandwidth Product VS. Collector Current
Fig. 1 Power Derating Curve
1000
400
o
T = 25 C
A
See Note 1
f = 20 MHz
300
-V = 5.0 V
CE
100
200 -V = 1 V
CE
100
10
1 10 100 1000
0
0 50 100 150 200
I , Collector Current (mA)
C
o
T , Substrate Temperature ( C)
SB
Fig. 4 DC Current Gain VS. Collector Current
Fig.3 Collector Sat Voltage VS. Collector Current
1000
1000
-V = 1V
o CE
- 50 C
o
150 C
o
25 C
100
o
25 C
Typical
-------- Limits
100
o
10 at T = 25 C
A
o
150 C
o
- 50 C
-I / -I = 10
C B
1
10
0. 1
0. 1 1 10 100 1000
0 0. 1 0. 2 0. 3 0. 4 0. 5
-I , Collector Current (mA)
-V , Collector Saturation Voltage (V)
C
CESAT
Fig. 6 Typical Emitter-Collector Characteristics
Fig.5 Typical Emitter-Collector Characterisitcs
100
500
0.4
2.8
3.2 2.4
0.35
1.4
80
2.0
400
1.8
0.3
60
1.6
0.25
300
1.0 1.2
0.2
40
200
0.8
0.15
0.6
20
100
0.1
0.4
-I = 0.05 mA
B
-I = 0.2 mA
B
0
0
010 20
01 2
-V , Collector-Emitter Voltage (V)
-V , Collector-Emitter Voltage (V)
CE
CE
Document Number: DS_S1404007 Version: F14
-I Collector Current (mA)
-I , Collector Current (mA)
C,
c
P , Power Dissipation (mW)
D
-I , Collector Current ( mA )
C
f Gain Bandwidth Product
T,
h , DC Current Gain
FE