X-On Electronics has gained recognition as a prominent supplier of BC807DSF Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC807DSF Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC807DSF Nexperia

BC807DSF electronic component of Nexperia
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Part No.BC807DSF
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT BC807DS/SC-74/REEL 13" Q1/T1 *
Datasheet: BC807DSF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2607 ea
Line Total: USD 0.26 
Availability - 67279
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
67279
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2607
10 : USD 0.1771
100 : USD 0.0935
1000 : USD 0.0781
2500 : USD 0.0693
10000 : USD 0.0627
20000 : USD 0.0594
50000 : USD 0.055
100000 : USD 0.0528

   
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We are delighted to provide the BC807DSF from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC807DSF and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC807DS PNP/PNP general purpose double transistors 3 May 2019 Product data sheet 1. General description PNP/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package. NPN/NPN complement: BC817DS NPN/PNP complement: BC817DPN 2. Features and benefits Reduces component count Reduces pick and place costs AEC-Q101 qualified 3. Applications General purpose switching and amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - -45 V CEO voltage I collector current - - -500 mA C I peak collector current single pulse t 1 ms - - -1 A CM p 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 6 5 4 C1 B2 E2 2 B1 base TR1 C2 C1 TR2 3 C2 collector TR2 TR1 1 2 3 4 E2 emitter TR2 SC-74 TSOP6 (SOT457) E1 B2 C2 5 B2 base TR2 sym018 6 C1 collector TR1Nexperia BC807DS PNP/PNP general purpose double transistors 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BC807DS SC-74 TSOP6 plastic, surface-mounted package (SC-74 TSOP6) 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code BC807DS N2 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - -50 V CBO V collector-emitter voltage open base - -45 V CEO V emitter-base voltage open collector - -5 V EBO I collector current - -500 mA C I peak collector current single pulse t 1 ms - -1 A CM p I peak base current - -200 mA BM P total power dissipation T 25 C 1 - 370 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg Per device P total power dissipation T 25 C 1 - 600 mW tot amb 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB) single-sided copper tin plated mounting pad for collector 1 cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device R thermal resistance from in free air 1 - - 208 K/W th(j-a) junction to ambient 2 1 Device mounted on an FR4 PCB single-sided copper tin-plated mounting pad for collector 1 cm . BC807DS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 3 May 2019 2 / 8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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