BC817DPN,115 Nexperia

BC817DPN NPN/PNP general purpose transistor 27 November 2019 Product data sheet 1. General description NPN/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package. 2. Features and benefits Reduces component count Reduces pick and place costs AEC-Q101 qualified 3. Applications General purpose switching and amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor for the PNP transistor with negative polarity V collector-emitter open base - - 45 V CEO voltage I collector current - - 500 mA C I peak collector current single pulse t 1 ms - - 1 A CM p Per transistor unless otherwise specified for the PNP transistor with negative polarity h DC current gain V = 1 V I = 100 mA 1 160 - 400 FE CE C 1 Pulsed test: t 300 s 0.02 p 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 6 5 4 C1 1 E1 emitter TR1 B2 E2 2 B1 base TR1 TR2 3 C2 collector TR2 TR1 1 2 3 4 E2 emitter TR2 SC-74 TSOP6 (SOT457) E1 B1 C2 5 B2 base TR2 sym019 6 C1 collector TR1Nexperia BC817DPN NPN/PNP general purpose transistor 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BC817DPN SC-74 TSOP6 plastic, surface-mounted package (SC-74 TSOP6) 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code BC817DPN N4 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor for the PNP transistor with negative polarity V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 45 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 500 mA C I peak collector current single pulse t 1 ms - 1 A CM p I peak base current - 200 mA BM P total power dissipation T 25 C 1 - 370 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg Per device P total power dissipation T 25 C 1 - 600 mW tot amb 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB) single-sided copper tin plated mounting pad for collector 1 cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device R thermal resistance from in free air 1 - - 208 K/W th(j-a) junction to ambient 2 1 Device mounted on an FR4 PCB single-sided copper tin-plated mounting pad for collector 1 cm . BC817DPN All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 27 November 2019 2 / 9