X-On Electronics has gained recognition as a prominent supplier of BC817DS,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC817DS,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC817DS,115 Nexperia

BC817DS,115 electronic component of Nexperia
BC817DS,115 Nexperia
BC817DS,115 Bipolar Transistors - BJT
BC817DS,115  Semiconductors

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See Product Specifications
Part No. BC817DS,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Datasheet: BC817DS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0978 ea
Line Total: USD 0.98 
Availability - 13027
Ship by Thu. 06 Feb to Tue. 11 Feb
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
8730
Ship by Thu. 30 Jan to Wed. 05 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0599
6000 : USD 0.059
12000 : USD 0.0558
15000 : USD 0.0555
45000 : USD 0.0537

13027
Ship by Thu. 06 Feb to Tue. 11 Feb
MOQ : 10
Multiples : 10
10 : USD 0.0978
100 : USD 0.0765
300 : USD 0.0565
3000 : USD 0.0447
6000 : USD 0.0397
9000 : USD 0.0373

52050
Ship by Tue. 28 Jan to Thu. 30 Jan
MOQ : 1
Multiples : 1
1 : USD 0.3062
10 : USD 0.1975
100 : USD 0.0924
1000 : USD 0.0759
3000 : USD 0.055
9000 : USD 0.0539
24000 : USD 0.0528

910830
Ship by Thu. 30 Jan to Wed. 05 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0701
9000 : USD 0.0611
24000 : USD 0.0599

34920
Ship by Thu. 30 Jan to Wed. 05 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0661
9000 : USD 0.0526

12580
Ship by Thu. 30 Jan to Wed. 05 Feb
MOQ : 1572
Multiples : 1
1572 : USD 0.0708

20370
Ship by Thu. 30 Jan to Wed. 05 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0529

1940
Ship by Thu. 30 Jan to Wed. 05 Feb
MOQ : 640
Multiples : 1
640 : USD 0.1015
643 : USD 0.1011
1000 : USD 0.0823
2000 : USD 0.068

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC817DS,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC817DS,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC817DS NPN/NPN general purpose double transistors 25 June 2019 Product data sheet 1. General description NPN/NPN general-purpose double transistors in an SOT457 (SC-74) plastic package. PNP/PNP complement: BC807DS NPN/PNP complement: BC817DPN 2. Features and benefits Reduces component count Reduces pick and place costs AEC-Q101 qualified 3. Applications General purpose switching and amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - 45 V CEO voltage I collector current - - 500 mA C I peak collector current single pulse t 1 ms - - 1 A CM p h DC current gain V = 1 V I = 100 mA 1 160 - 400 FE CE C 1 Pulsed test: t 300 s 0.02 p 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 6 5 4 C1 B2 E2 2 B1 base TR1 TR2 3 C2 collector TR2 TR1 1 2 3 4 E2 emitter TR2 SC-74 TSOP6 (SOT457) E1 B1 C2 5 B2 base TR2 sym020 6 C1 collector TR1Nexperia BC817DS NPN/NPN general purpose double transistors 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BC817DS SC-74 TSOP6 plastic, surface-mounted package (SC-74 TSOP6) 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code BC817DS N3 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 45 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 500 mA C I peak collector current single pulse t 1 ms - 1 A CM p I peak base current - 200 mA BM P total power dissipation T 25 C 1 - 370 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg Per device P total power dissipation T 25 C 1 - 600 mW tot amb 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB) single-sided copper tin plated mounting pad for collector 1 cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device R thermal resistance from in free air 1 - - 208 K/W th(j-a) junction to ambient 2 1 Device mounted on an FR4 PCB single-sided copper tin-plated mounting pad for collector 1 cm . BC817DS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 25 June 2019 2 / 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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