X-On Electronics has gained recognition as a prominent supplier of BC817DSF Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC817DSF Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC817DSF Nexperia

BC817DSF electronic component of Nexperia
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See Product Specifications
Part No.BC817DSF
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN general purpose double transistor
Datasheet: BC817DSF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2725 ea
Line Total: USD 0.27 
Availability - 15976
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15976
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2725
10 : USD 0.1851
100 : USD 0.0978
1000 : USD 0.0816
2500 : USD 0.0725
10000 : USD 0.0575
20000 : USD 0.0575
50000 : USD 0.0552

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC817DSF from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC817DSF and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC817DS NPN/NPN general purpose double transistors 25 June 2019 Product data sheet 1. General description NPN/NPN general-purpose double transistors in an SOT457 (SC-74) plastic package. PNP/PNP complement: BC807DS NPN/PNP complement: BC817DPN 2. Features and benefits Reduces component count Reduces pick and place costs AEC-Q101 qualified 3. Applications General purpose switching and amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - 45 V CEO voltage I collector current - - 500 mA C I peak collector current single pulse t 1 ms - - 1 A CM p h DC current gain V = 1 V I = 100 mA 1 160 - 400 FE CE C 1 Pulsed test: t 300 s 0.02 p 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 6 5 4 C1 B2 E2 2 B1 base TR1 TR2 3 C2 collector TR2 TR1 1 2 3 4 E2 emitter TR2 SC-74 TSOP6 (SOT457) E1 B1 C2 5 B2 base TR2 sym020 6 C1 collector TR1Nexperia BC817DS NPN/NPN general purpose double transistors 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BC817DS SC-74 TSOP6 plastic, surface-mounted package (SC-74 TSOP6) 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code BC817DS N3 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 45 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 500 mA C I peak collector current single pulse t 1 ms - 1 A CM p I peak base current - 200 mA BM P total power dissipation T 25 C 1 - 370 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg Per device P total power dissipation T 25 C 1 - 600 mW tot amb 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB) single-sided copper tin plated mounting pad for collector 1 cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device R thermal resistance from in free air 1 - - 208 K/W th(j-a) junction to ambient 2 1 Device mounted on an FR4 PCB single-sided copper tin-plated mounting pad for collector 1 cm . BC817DS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 25 June 2019 2 / 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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