X-On Electronics has gained recognition as a prominent supplier of BC856S Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC856S Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC856S Nexperia

BC856S electronic component of Nexperia
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See Product Specifications
Part No.BC856S
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: TRANSISTOR, PNP/PNP, 65V, SOT363
Datasheet: BC856S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1366 ea
Line Total: USD 0.68 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 5
Multiples : 1
5 : USD 0.1366
50 : USD 0.0966
100 : USD 0.0608
500 : USD 0.0508
1500 : USD 0.05

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
Transition Frequency Ft
LoadingGif
 
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We are delighted to provide the BC856S from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC856S and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC856S 65 V, 100 mA PNP/PNP general-purpose transistor Rev. 02 19 February 2009 Product data sheet 1. Product prole 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features n Low collector capacitance n Low collector-emitter saturation voltage n Closely matched current gain n Reduces number of components and board space n No mutual interference between the transistors 1.3 Applications n General-purpose switching and amplication 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - - 65 V CEO I collector current - - - 100 mA C h DC current gain V = - 5V 110 - - FE CE I = - 2mA C 2. Pinning information Table 2. Pinning Pin Description Simplied outline Graphic symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 TR1 4 emitter TR2 132 5 base TR2 1 2 3 6 collector TR1 sym018BC856S NXP Semiconductors 65 V, 100 mA PNP/PNP general-purpose transistor 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BC856S SC-88 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code BC856S 5F* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - - 80 V CBO V collector-emitter voltage open base - - 65 V CEO V emitter-base voltage open collector - -5V EBO I collector current - - 100 mA C 1 P total power dissipation T 25 C - 220 mW tot amb 2 - 250 mW Per device 1 P total power dissipation T 25 C - 300 mW tot amb 2 - 400 mW T junction temperature - 150 C j T ambient temperature - 65 +150 C amb T storage temperature - 65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . BC856S 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 19 February 2009 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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