X-On Electronics has gained recognition as a prominent supplier of BC857A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC857A Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC857A Nexperia

BC857A electronic component of Nexperia
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Part No.BC857A
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SOT-23 PNP GP AMP
Datasheet: BC857A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 0.0272 ea
Line Total: USD 13.6 
Availability - 0
MOQ: 500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 500
Multiples : 1
500 : USD 0.0272
1500 : USD 0.0253

   
Manufacturer
Product Category
Package / Case
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Product Range
Msl
Svhc
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Gain Bandwidth Ft Min
Gain Bandwidth Ft Typ
Hfe Min
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Smd Marking
Termination Type
Voltage Vcbo
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We are delighted to provide the BC857A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC857A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC856- BC860 PNP Epitaxial Silicon Transistor August 2006 BC856- BC860 tm PNP Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits 3 Low Noise: BC859, BC860 Complement to BC846 ... BC850 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T = 25C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage CBO : BC856 -80 V : BC857/860 -50 V : BC858/859 -30 V V Collector-Emitter Voltage CEO : BC856 -65 V : BC857/860 -45 V : BC858/859 -30 V V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -100 mA C P Collector Power Dissipation 310 mW C T Junction Temperature 150 C J T Storage Temperature -65 ~ 150 C STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = -30V, I =0 -15 nA CBO CB E h DC Current Gain V = -5V, I = -2mA 110 800 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -90 -300 mV CE C B I = -100mA, I = -5mA -250 -650 mV C B V (sat) Base-Emitter Saturation Voltage I = -10mA, I = -0.5mA -700 mV BE C B I = -100mA, I = -5mA -900 mV C B V (on) Base-Emitter On Voltage V = -5V, I = -2mA -600 -660 -750 mV BE CE C V = -5V, I = -10mA -800 mV CE C f Current Gain Bandwidth Product V = -5V, I = -10mA 150 MHz T CE C f=100MHz C Output Capacitance V = -10V, I =0, f=1MHz 6 pF ob CB E NF Noise Figure : BC856/857/858 V = -5V, I = -200A 2 10 dB CE C : BC859/860 R =2K, f=1KHz 1 4 dB G : BC859 V = -5V, I = -200A 1.2 4 dB CE C : BC860 R =2K, f=30~15000Hz 1.2 2 dB G * Pulse Test: Pulse Width300s, Duty Cycle2% 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BC856- BC860 Rev. BBC856- BC860 PNP Epitaxial Silicon Transistor h Classification FE Classification A B C h 110 ~ 220 200 ~ 450 420 ~ 800 FE Ordering Information Device(note1) Device Marking Package Packing Method Qty(pcs) Pin Difinitions BC856AMTF 9AA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC856BMTF 9AB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC856CMTF 9AC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC857AMTF 9BA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC857BMTF 9BB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC857CMTF 9BC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC858AMTF 9CA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC858BMTF 9CB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC858CMTF 9CC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC859AMTF 9DA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC859BMTF 9DB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC859CMTF 9DC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC860AMTF 9EA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC860BMTF 9EB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC860CMTF 9EC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector Note1 : Affix -A,-B,-C means hFE classification. Affix -M means the matte type package. Affix -TF means the tape & reel type packing. 2 www.fairchildsemi.com BC856- BC860 Rev. B

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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