X-On Electronics has gained recognition as a prominent supplier of BC868,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC868,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC868,115 Nexperia

BC868,115 electronic component of Nexperia
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See Product Specifications
Part No.BC868,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT NPN 20V 1A
Datasheet: BC868,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1813 ea
Line Total: USD 0.91

Availability - 27016
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1314
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 527
Multiples : 1
527 : USD 0.2393
1000 : USD 0.1435

27016
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 5
Multiples : 5
5 : USD 0.1813
50 : USD 0.1434
150 : USD 0.1272
1000 : USD 0.1036
2000 : USD 0.0948
5000 : USD 0.0894

5501
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 0.4425
10 : USD 0.3411
100 : USD 0.1928
1000 : USD 0.1204
2000 : USD 0.1114
25000 : USD 0.1092
50000 : USD 0.1092
100000 : USD 0.1081

1865
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 0.5544
10 : USD 0.4246
93 : USD 0.1726
256 : USD 0.1625

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the BC868,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC868,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCP68 BC868 BC68PA 20 V, 2 A NPN medium power transistors Rev. 8 18 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview 1 Type number Package PNP complement Nexperia JEITA JEDEC BCP68 SOT223 SC-73 - BCP69 BC868 SOT89 SC-62 TO-243 BC869 BC68PA SOT1061 - - BC69PA 1 Valid for all available selection groups. 1.2 Features and benefits High current Two current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators Power management Low-side switches MOSFET drivers Battery-driven devices Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 20 V CEO I collector current - - 2 A C I peak collector current single pulse t 1ms - - 3 A CM pBCP68 BC868 BC68PA Nexperia 20 V, 2 A NPN medium power transistors Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit 1 h DC current gain V =1V I =500 mA 85 - 375 FE CE C 1 h selection -25 V =1V I =500 mA 160 - 375 FE CE C 1 Pulse test: t 300 s = 0.02. p 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT223 1base 4 2, 4 2 collector 3emitter 1 4 collector 132 3 sym016 SOT89 1emitter 2 2 collector 3 3base 1 321 sym042 SOT1061 1base 3 3 2emitter 3 collector 1 2 sym021 12 Transparent top view BCP68 BC868 BC68PA All information provided in this document is subject to legal disclaimers Product data sheet Rev. 8 18 October 2011 2 of 23 Nexperia B.V. 2017. All rights reserved

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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