X-On Electronics has gained recognition as a prominent supplier of BC868-25,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC868-25,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC868-25,115 Nexperia

BC868-25,115 electronic component of Nexperia
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See Product Specifications
Part No.BC868-25,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 20 V 2 A 170MHz 500 mW Surface Mount SOT-89
Datasheet: BC868-25,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3996 ea
Line Total: USD 0.4 
Availability - 4514
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
955
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2693
50 : USD 0.2182
150 : USD 0.1963
1000 : USD 0.1688
2000 : USD 0.1567
5000 : USD 0.1492

4514
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3996
10 : USD 0.2749
100 : USD 0.1675
1000 : USD 0.1282
2000 : USD 0.1225
10000 : USD 0.1132
100000 : USD 0.1132

447
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5145
10 : USD 0.3528
50 : USD 0.2896
94 : USD 0.1911
258 : USD 0.1808

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the BC868-25,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC868-25,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCP68 BC868 BC68PA 20 V, 2 A NPN medium power transistors Rev. 8 18 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview 1 Type number Package PNP complement Nexperia JEITA JEDEC BCP68 SOT223 SC-73 - BCP69 BC868 SOT89 SC-62 TO-243 BC869 BC68PA SOT1061 - - BC69PA 1 Valid for all available selection groups. 1.2 Features and benefits High current Two current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators Power management Low-side switches MOSFET drivers Battery-driven devices Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 20 V CEO I collector current - - 2 A C I peak collector current single pulse t 1ms - - 3 A CM pBCP68 BC868 BC68PA Nexperia 20 V, 2 A NPN medium power transistors Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit 1 h DC current gain V =1V I =500 mA 85 - 375 FE CE C 1 h selection -25 V =1V I =500 mA 160 - 375 FE CE C 1 Pulse test: t 300 s = 0.02. p 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT223 1base 4 2, 4 2 collector 3emitter 1 4 collector 132 3 sym016 SOT89 1emitter 2 2 collector 3 3base 1 321 sym042 SOT1061 1base 3 3 2emitter 3 collector 1 2 sym021 12 Transparent top view BCP68 BC868 BC68PA All information provided in this document is subject to legal disclaimers Product data sheet Rev. 8 18 October 2011 2 of 23 Nexperia B.V. 2017. All rights reserved

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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