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X-On Electronics has gained recognition as a prominent supplier of BCM847DS,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCM847DS,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCM847DS,115 Nexperia

BCM847DS,115 electronic component of Nexperia
BCM847DS,115 Nexperia
BCM847DS,115 Bipolar Transistors - BJT
BCM847DS,115  Semiconductors

Images are for reference only
See Product Specifications
Part No. BCM847DS,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS MATCHED PAIR
Datasheet: BCM847DS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5175 ea
Line Total: USD 0.52 
Availability - 17561
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
766
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 5
Multiples : 5
5 : USD 0.3108
50 : USD 0.2453
150 : USD 0.1865
500 : USD 0.1408
3000 : USD 0.129
6000 : USD 0.1216

17561
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.5175
10 : USD 0.32
100 : USD 0.1956
500 : USD 0.1375
1000 : USD 0.1199
3000 : USD 0.099
6000 : USD 0.0935
9000 : USD 0.0858
24000 : USD 0.0847

1109
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.602
10 : USD 0.2856
50 : USD 0.2058
100 : USD 0.182
112 : USD 0.1582

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCM847DS,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCM847DS,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCM847BV BCM847BS BCM847DS NPN/NPN matched double transistors Rev. 06 28 August 2009 Product data sheet 1. Product prole 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number Package PNP/PNP Matched version of complement Nexperia JEITA BCM847BV SOT666 - BCM857BV BC847BV BCM847BS SOT363 SC-88 BCM857BS BC847BS BCM847DS SOT457 SC-74 BCM857DS - 1.2 Features n Current gain matching n Base-emitter voltage matching n Drop-in replacement for standard double transistors 1.3 Applications n Current mirror n Differential amplier 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - 45 V CEO I collector current - - 100 mA C h DC current gain V =5V 200 290 450 FE CE I =2mA CBCM847BV/BS/DS Nexperia NPN/NPN matched double transistors Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Per device 1 h /h h matching V =5V 0.9 1 - FE1 FE2 FE CE I =2mA C 2 V V- V matching V =5V --2 mV BE1 BE2 BE CE I =2mA C 1 The smaller of the two values is taken as the numerator. 2 The smaller of the two values is subtracted from the larger value. 2. Pinning information Table 3. Pinning Pin Description Simplied outline Symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 TR1 4 emitter TR2 5 base TR2 1 2 3 1 2 3 6 collector TR1 001aab555 sym020 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BCM847BV - plastic surface-mounted package 6 leads SOT666 BCM847BS SC-88 plastic surface-mounted package 6 leads SOT363 BCM847DS SC-74 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 5. Marking codes 1 Type number Marking code BCM847BV 3A BCM847BS M1* BCM847DS R6 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BCM847BV BS DS 6 NNexperia B.V. 2017. All rights reserved Product data sheet Rev. 06 28 August 2009 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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