X-On Electronics has gained recognition as a prominent supplier of BCP51,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCP51,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCP51,115 Nexperia

BCP51,115 electronic component of Nexperia
BCP51,115 Nexperia
BCP51,115 Bipolar Transistors - BJT
BCP51,115  Semiconductors

Images are for reference only
See Product Specifications
Part No. BCP51,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 45 V 1 A 145MHz 1 W Surface Mount SOT-223
Datasheet: BCP51,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3062 ea
Line Total: USD 0.31 
Availability - 55013
Ship by Fri. 02 May to Tue. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
223
Ship by Tue. 13 May to Fri. 16 May
MOQ : 5
Multiples : 5
5 : USD 0.1898
50 : USD 0.149
150 : USD 0.1284
1000 : USD 0.0764
2000 : USD 0.068
5000 : USD 0.064

55013
Ship by Fri. 02 May to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 0.3062
10 : USD 0.1675
100 : USD 0.1188
500 : USD 0.0946
1000 : USD 0.0748
2000 : USD 0.0682
5000 : USD 0.0605
10000 : USD 0.0594
25000 : USD 0.0594

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCP51,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCP51,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCP51 BCX51 BC51PA 45 V, 1 A PNP medium power transistors Rev. 9 13 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview 1 Type number Package NPN complement Nexperia JEITA JEDEC BCP51 SOT223 SC-73 - BCP54 BCX51 SOT89 SC-62 TO-243 BCX54 BC51PA SOT1061 - - BC54PA 1 Valid for all available selection groups. 1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit collector-emitter voltage open base - - 45 V V CEO collector current - - 1A I C peak collector current single pulse t 1ms - - 2A I CM pBCP51 BCX51 BC51PA Nexperia 45 V, 1 A PNP medium power transistors Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit h DC current gain V = 2V 63 - 250 FE CE I = 150 mA C h selection -10 V = 2V 63 - 160 FE CE I = 150 mA C h selection -16 V = 2V 100 - 250 FE CE I = 150 mA C 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT223 1base 4 2, 4 2 collector 3emitter 1 4 collector 132 3 sym028 SOT89 1emitter 2 2 collector 3base 3 321 1 006aaa231 SOT1061 1base 3 3 2emitter 3 collector 1 2 sym013 12 Transparent top view BCP51 BCX51 BC51PA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 9 13 October 2011 2 of 22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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