AN10405 Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat (BISS) transistors Rev. 01.00 06 January 2006 Application note Document information Info Content Keywords Bipolar transistors, BISS, low V , PBSS, power transistors CEsat Abstract This application note provides information on how to make use of a cost saving opportunity by replacing older medium power and power transistors by Philips low V (BISS) transistors. A cross reference CEsat table provides a cross reference for leaded and SMD types. Further spreadsheets show a comparison of the most common parameters (V , I , V and h ). CEO C CEsat FE AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors Revision history Rev Date Description 01 20060106 Initial document Contact information For additional information, please visit: