X-On Electronics has gained recognition as a prominent supplier of BCP53-10,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCP53-10,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCP53-10,115 Nexperia

Hot BCP53-10,115 electronic component of Nexperia
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Part No.BCP53-10,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 80 V 1 A 145MHz 1 W Surface Mount SOT-223
Datasheet: BCP53-10,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.092 ea
Line Total: USD 0.46 
Availability - 924
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
13580
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.0598
3000 : USD 0.0598
10000 : USD 0.0598
20000 : USD 0.0598
40000 : USD 0.0598

924
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 5
Multiples : 5
5 : USD 0.092
50 : USD 0.0745
150 : USD 0.0659
1000 : USD 0.0594
2000 : USD 0.0541
5000 : USD 0.0516

2130
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.297
10 : USD 0.1925
100 : USD 0.1012
1000 : USD 0.0781
2000 : USD 0.0693
10000 : USD 0.0649
25000 : USD 0.0638
50000 : USD 0.0605

8638
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 104
Multiples : 1
104 : USD 0.0755
250 : USD 0.0748
500 : USD 0.0718
1000 : USD 0.0666
3000 : USD 0.0612
6000 : USD 0.0559

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the BCP53-10,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCP53-10,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCP53 BCX53 BC53PA 80 V, 1 A PNP medium power transistors Rev. 9 19 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview 1 Type number Package NPN complement Nexperia JEITA JEDEC BCP53 SOT223 SC-73 - BCP56 BCX53 SOT89 SC-62 TO-243 BCX56 BC53PA SOT1061 - - BC56PA 1 Valid for all available selection groups. 1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit collector-emitter voltage open base - - 80 V V CEO collector current - - 1A I C peak collector current single pulse t 1ms - - 2A I CM pBCP53 BCX53 BC53PA Nexperia 80 V, 1 A PNP medium power transistors Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit h DC current gain V = 2V 63 - 250 FE CE I = 150 mA C h selection -10 V = 2V 63 - 160 FE CE I = 150 mA C h selection -16 V = 2V 100 - 250 FE CE I = 150 mA C 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT223 1base 4 2, 4 2 collector 3emitter 1 4 collector 132 3 sym028 SOT89 1emitter 2 2 collector 3base 3 321 1 006aaa231 SOT1061 1base 3 3 2emitter 3 collector 1 2 sym013 12 Transparent top view BCP53 BCX53 BC53PA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 9 19 October 2011 2 of 22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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