X-On Electronics has gained recognition as a prominent supplier of BCP53-16,135 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCP53-16,135 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCP53-16,135 Nexperia

BCP53-16,135 electronic component of Nexperia
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See Product Specifications
Part No.BCP53-16,135
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 80 V 1 A 145MHz 1 W Surface Mount SOT-223
Datasheet: BCP53-16,135 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2321 ea
Line Total: USD 0.23 
Availability - 6606
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
85
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1365
10 : USD 0.1108
30 : USD 0.0998
100 : USD 0.086
500 : USD 0.0799
1000 : USD 0.0763

6606
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2321
10 : USD 0.154
100 : USD 0.0891
1000 : USD 0.0737
4000 : USD 0.0737
8000 : USD 0.0594
24000 : USD 0.0561

22280
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 6865
Multiples : 1
6865 : USD 0.071

10225
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 73
Multiples : 1
73 : USD 0.0796

15520
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 6865
Multiples : 1
6865 : USD 0.071

7760
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 4000
Multiples : 4000
4000 : USD 0.0568

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCP53-16,135 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCP53-16,135 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCP53 BCX53 BC53PA 80 V, 1 A PNP medium power transistors Rev. 9 19 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview 1 Type number Package NPN complement Nexperia JEITA JEDEC BCP53 SOT223 SC-73 - BCP56 BCX53 SOT89 SC-62 TO-243 BCX56 BC53PA SOT1061 - - BC56PA 1 Valid for all available selection groups. 1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit collector-emitter voltage open base - - 80 V V CEO collector current - - 1A I C peak collector current single pulse t 1ms - - 2A I CM pBCP53 BCX53 BC53PA Nexperia 80 V, 1 A PNP medium power transistors Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit h DC current gain V = 2V 63 - 250 FE CE I = 150 mA C h selection -10 V = 2V 63 - 160 FE CE I = 150 mA C h selection -16 V = 2V 100 - 250 FE CE I = 150 mA C 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT223 1base 4 2, 4 2 collector 3emitter 1 4 collector 132 3 sym028 SOT89 1emitter 2 2 collector 3base 3 321 1 006aaa231 SOT1061 1base 3 3 2emitter 3 collector 1 2 sym013 12 Transparent top view BCP53 BCX53 BC53PA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 9 19 October 2011 2 of 22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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