X-On Electronics has gained recognition as a prominent supplier of BCP69,135 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCP69,135 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCP69,135 Nexperia

BCP69,135 electronic component of Nexperia
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See Product Specifications
Part No.BCP69,135
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS MED PWR TAPE13
Datasheet: BCP69,135 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4000: USD 0.0789 ea
Line Total: USD 315.6 
Availability - 0
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 4000
Multiples : 4000
4000 : USD 0.0789
12000 : USD 0.0731
16000 : USD 0.0731
40000 : USD 0.0731
60000 : USD 0.0731

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.363
10 : USD 0.2607
100 : USD 0.132
1000 : USD 0.0957
4000 : USD 0.0814
8000 : USD 0.0715
24000 : USD 0.0682

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 4000
Multiples : 4000
4000 : USD 0.0849
8000 : USD 0.0832
12000 : USD 0.0827
24000 : USD 0.0811

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the BCP69,135 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCP69,135 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCP69 BC869 BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 12 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview 1 Type number Package NPN complement Nexperia JEITA JEDEC BCP69 SOT223 SC-73 - BCP68 BC869 SOT89 SC-62 TO-243 BC868 BC69PA SOT1061 - - BC68PA 1 Valid for all available selection groups. 1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators Power management High-side switches MOSFET drivers Battery-driven devices Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit collector-emitter voltage open base - - 20 V V CEO collector current - - 2A I C peak collector current single pulse t 1ms - - 3A I CM pBCP69 BC869 BC69PA Nexperia 20 V, 2 A PNP medium power transistors Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit 1 h DC current gain V = 1V 85 - 375 FE CE I = 500 mA C 1 h selection -16 V = 1V 100 - 250 FE CE I = 500 mA C 1 h selection -25 V = 1V 160 - 375 FE CE I = 500 mA C 1 Pulse test: t 300 s = 0.02. p 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT223 1base 4 2, 4 2 collector 3emitter 1 4 collector 132 3 sym028 SOT89 1emitter 2 2 collector 3base 3 321 1 006aaa231 SOT1061 1base 3 3 2emitter 3 collector 1 2 sym013 12 Transparent top view BCP69 BC869 BC69PA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 7 12 October 2011 2 of 24

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
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