X-On Electronics has gained recognition as a prominent supplier of BCV61,235 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCV61,235 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCV61,235 Nexperia

BCV61,235 electronic component of Nexperia
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Part No.BCV61,235
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT TRANS MATCHED PAIR
Datasheet: BCV61,235 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3256 ea
Line Total: USD 0.33 
Availability - 8101
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8101
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3256
10 : USD 0.2486
100 : USD 0.1353
1000 : USD 0.1001
2500 : USD 0.0946
10000 : USD 0.0869
20000 : USD 0.0825

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCV61,235 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCV61,235 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCV61 NPN general-purpose double transistors Rev. 04 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement Nexperia JEITA BCV61 SOT143B - BCV62 BCV61A BCV62A BCV61B BCV62B BCV61C BCV62C 1.2 Features Low current (max. 100 mA) Low voltage (max. 30 V) Matched pairs 1.3 Applications Applications with working point independent of temperature Current mirrors 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 collector TR2 4 3 4 3 base TR1 and TR2 2 collector TR1 TR2 TR1 3emitterTR1 4emitterTR2 1 2 12 006aaa842BCV61 Nexperia NPN general-purpose double transistors 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BCV61 - plastic surface-mounted package 4 leads SOT143B BCV61A BCV61B BCV61C 4. Marking Table 4. Marking codes 1 Type number Marking code BCV61 1M* BCV61A 1J* BCV61B 1K* BCV61C 1L* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 30 V CBO V collector-emitter voltage open base - 30 V CEO V emitter-base voltage V =0V - 6 V EBS CE I collector current - 100 mA C I peak collector current - 200 mA CM I peak base current - 200 mA BM Per device 1 P total power dissipation T 25 C -250 mW tot amb T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB). BCV61 Nexperia B.V. 2009. All rights reserved. Product data sheet Rev. 04 18 December 2009 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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