X-On Electronics has gained recognition as a prominent supplier of BCV62A,215 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCV62A,215 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCV62A,215 Nexperia

BCV62A,215 electronic component of Nexperia
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See Product Specifications
Part No.BCV62A,215
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Datasheet: BCV62A,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4554 ea
Line Total: USD 0.46 
Availability - 13890
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1824
Ship by Thu. 12 Dec to Tue. 17 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1453
50 : USD 0.127
150 : USD 0.1193
500 : USD 0.1096
3000 : USD 0.1053
6000 : USD 0.1028

13890
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4554
10 : USD 0.308
100 : USD 0.1639
1000 : USD 0.143
3000 : USD 0.0957
9000 : USD 0.0924
24000 : USD 0.0836
45000 : USD 0.0825

13148
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 814
Multiples : 1
814 : USD 0.2065

8730
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 4666
Multiples : 1
4666 : USD 0.1045

55290
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 4666
Multiples : 1
4666 : USD 0.1045

142590
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 4666
Multiples : 1
4666 : USD 0.1045

5820
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 4666
Multiples : 1
4666 : USD 0.1045

372
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 289
Multiples : 1
289 : USD 0.2275

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the BCV62A,215 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCV62A,215 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCV62 PNP general-purpose double transistors Rev. 4 26 July 2010 Product data sheet 1. Product profile 1.1 General description PNP general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN complement Nexperia JEITA BCV62 SOT143B - BCV61 BCV62A BCV61A BCV62B BCV61B BCV62C BCV61C 1.2 Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V) Matched pairs AEC-Q101 qualified Small SMD plastic package 1.3 Applications Applications with working point independent of temperature Current mirrors 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - 30 V CEO I collector current - - 100 mA C Transistor TR1 h DC current gain V = 5V I = 100 A 100 - - FE CE C V = 5V I = 2 mA 100 - 800 CE CBCV62 Nexperia PNP general-purpose double transistors Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Transistor TR2 h DC current gain V = 5V I = 2mA FE CE C BCV62 100 - 800 BCV62A 100 - 250 BCV62B 220 - 475 BCV62C 420 - 800 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 collector TR2 4 3 4 3 base TR1 and TR2 2 collector TR1 TR2 TR1 3emitterTR1 4emitterTR2 1 2 12 006aaa843 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BCV62 - plastic surface-mounted package 4 leads SOT143B BCV62A BCV62B BCV62C 4. Marking Table 5. Marking codes 1 Type number Marking code BCV62 3M* BCV62A 3J* BCV62B 3K* BCV62C 3L* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BCV62 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 4 26 July 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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