BCW60B,215 Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BCW60 series NPN general purpose transistors Product data sheet 1999 Apr 22 Supersedes data of 1997 Mar 10 NXP Semiconductors Product data sheet NPN general purpose transistors BCW60 series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 32 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION handbook, halfpage 3 3 NPN transistor in a SOT23 plastic package. PNP complements: BCW61 series. 1 MARKING 2 1 2 (1) TYPE NUMBER MARKING CODE Top view MAM255 BCW60B AB BCW60C AC BCW60D AD Fig.1 Simplified outline (SOT23) and symbol. Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 32 V CBO V collector-emitter voltage open base 32 V CEO V emitter-base voltage open collector 5 V EBO I collector current (DC) 100 mA C I peak collector current 200 mA CM I peak base current 200 mA BM P total power dissipation T 25 C 250 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb 1999 Apr 22 2