BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 32 V CBO V Collector-Emitter Voltage 32 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 C STG 2002 Fairchild Semiconductor Corporation Rev. B2, December 2002BCW60A/B/C/D Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I =2mA, I =0 32 V CEO C B BV Emitter-Base Breakdown Voltage I =1 A, I =0 5 V EBO E C I Collector Cut-off Current V =32V, V =0 20 nA CES CE BE I Emitter Cut-off Current V =4V, I =0 20 nA EBO EB C h DC Current Gain FE : BCW60B V =5V, I =10 A 20 CE C : BCW60C 40 : BCW60D 100 : BCW60A V =5V, I =2mA 120 220 CE C : BCW60B 180 310 : BCW60C 250 460 : BCW60D 380 630 : BCW60A V =1V, I =50mA 60 CE C : BCW60B 70 : BCW60C 90 : BCW60D 100 V (sat) Collector-Emitter Saturation Voltage I =50mA, I =1.25mA 0.55 V CE C B I =10mA, I =0.25mA 0.35 V C B V (sat) Base-Emitter Saturation Voltage I =50mA, I =1.25mA 0.7 1.05 V BE C B I =10mA, I =0.25mA 0.6 0.85 V C B V (on) Base-Emitter On Voltage V =5V, I =2mA 0.55 0.75 V BE CE C C Output Capacitance V =10V, I =0, f=1MHz 4.5 pF ob CB E f Current Gain Bandwidth Product I =10mA, V =5V, f=100MHz 125 MHz T C CE NF Noise Figure I =0.2mA, V =5V 6dB C CE R =2K , f=1KHz G t Turn On Time I =10mA, I =1mA 150 ns ON C B1 t Turn Off Time V =3.6V, I =1mA 800 ns OFF BB B2 R1=R2=5K ,R =990 L Marking Code Type BCW60A BCW60B BCW60C BCW60D Mark. AA AB AC AD Marking AA 2002 Fairchild Semiconductor Corporation Rev. B2, December 2002