BCW61D Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BCW61 series PNP general purpose transistors Product data sheet 1999 Apr 12 Supersedes data of 1997 May 28 NXP Semiconductors Product data sheet PNP general purpose transistors BCW61 series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 32 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. handbook, halfpage 3 NPN complement: BCW60. 3 MARKING 1 (1) TYPE NUMBER MARKING CODE 2 BCW61B BB 1 2 BCW61C BC Top view MAM256 BCW61D BD Note 1. = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 32 V CBO V collector-emitter voltage open base 32 V CEO V emitter-base voltage open collector 5 V EBO I collector current (DC) 100 mA C I peak collector current 200 mA CM I peak base current 100 mA BM P total power dissipation T 25 C note 1 250 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 12 2