BCW68GR Nexperia

BCW68 series 45 V, 800 mA PNP general-purpose transistor Rev. 1 21 April 2017 Product data sheet 1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complements: BCW66F/G/H 2 Features and benefits High current AEC-Q101 qualified 3 Applications General-purpose switching and amplification 4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - -45 V CEO I collector current - - -800 mA C I peak collector current single pulse t 1 ms - - -1 A CM p 1 h DC current gain V = -1 V I = -100 mA T = 25 C FE CE C amb BCW68F 100 - 250 BCW68G 160 - 400 BCW68H 250 - 600 1 pulsed: t 300 s, 0.02 pNexperia BCW68 series 45 V, 800 mA PNP general-purpose transistor 5 Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 C 2 E emitter 3 C collector B E sym132 1 2 6 Ordering information Table 3. Ordering information Type number Package Name Description Version BCW68F TO-236AB plastic surface-mounted package 3 leads SOT23 BCW68G BCW68H 7 Marking Table 4. Marking Type number Marking code 1 BCW68F ET% 1 BCW68G EU% 1 BCW68H EV% 1 % = placeholder for manufacturing site code 8 Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -50 V CBO V collector-emitter voltage open base - -45 V CEO V emitter-base voltage open collector - -5 V EBO I collector current - -800 mA C I peak collector current single pulse t 1 ms - -1 A CM p I base current - -100 mA B BCW68X SER All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved. Product data sheet Rev. 1 21 April 2017 2 / 13