BCX55-10TF Nexperia

BCX55T series 60 V, 1 A NPN power bipolar transistors Rev. 1 22 August 2019 Product data sheet 1. Product profile 1.1. General description NPN power transistors in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement Nexperia JEDEC BCX55T SOT89 SC-62 BCX52T BCX55-10T BCX52-10T BCX55-16T BCX52-16T 1.2. Features and benefits High collector current capability I and I C CM Three current gain selections High power dissipation capability AEC-Q101 qualified 1.3. Applications Linear voltage regulators MOSFET drivers Low-side switches Power management Amplifiers 1.4. Quick reference data Table 2. Quick reference data T = 25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 60 V CEO I collector current - - 1 A C I peak collector current single pulse t 1 ms - - 2 A CM pNexperia BCX55T series 60 V, 1 A NPN power bipolar transistors Symbol Parameter Conditions Min Typ Max Unit h DC current gain FE BCX55T V = 2 V I = 150 mA 1 63 - 250 CE C BCX55-10T 1 63 - 160 BCX55-16T 1 100 - 250 1 pulsed t 300 s 0.02 p 2. Pinning information Table 3. Pinning Pin Symbol Description Simplified outline Graphic symbol C 1 E emitter 2 C collector B 3 B base E 3 2 1 sym042 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BCX55T SC-62 plastic, surface-mounted package 3 leads 1.5 mm pitch SOT89 4.5 mm x 2.5 mm x 1.5 mm body BCX55-10T BCX55-16T 4. Marking Table 5. Marking Type number Marking code BCX55T B2 BCX55-10T B3 BCX55-16T B4 BCX55T SER All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet Rev. 1 22 August 2019 2 / 12